Design and analysis of SRAM cell in 4H-SiC

Hazem Elgabra, Aamenah Siddiqui, Shakti Singh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

Memory forms a major part of any integrated circuit (IC) and is considered a key component of an electronic system. Though various ICs using silicon carbide (SiC) have been designed and demonstrated, yet in order to make a complete functioning electronic module in SiC, memory design and architecture are needed. In this work, we report the design and analysis of a Static Random Access (SRAM) cell in SiC, which is capable of operating at high temperatures and high speeds. The paper highlights the potential and stable operation of the cell in terms of static noise margins (Read and Hold) and access times (Read and Write). The results show that the designed cell is capable of operating even at a low supply voltage of 5 V, as opposed to the conventional 15 V used in SiC circuits. The proposed design shows stable operation across a wide temperature range (27 °C C-500 °C) and across all operating parameters, validating the potential of memory architecture in SiC.

Original languageBritish English
Title of host publication2016 IEEE 59th International Midwest Symposium on Circuits and Systems, MWSCAS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509009169
DOIs
StatePublished - 2 Jul 2016
Event59th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2016 - Abu Dhabi, United Arab Emirates
Duration: 16 Oct 201619 Oct 2016

Publication series

NameMidwest Symposium on Circuits and Systems
Volume0
ISSN (Print)1548-3746

Conference

Conference59th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2016
Country/TerritoryUnited Arab Emirates
CityAbu Dhabi
Period16/10/1619/10/16

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