Dependency of IV characteristics of GaAs MESFET on optical illumination

  • N. T. Ali
  • , J. Rodriguez-Tellez
  • , Kahtan Mezher
  • , C. Navarro
  • , A. Tazon
  • , A. Mediavilla
  • , T. Femandez

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A high-resolution LED laser based optical measurement system is described to observe the optical dependence of the IV characteristics of the GaAs MESFET device when its surface is probed using a narrow optical beam. The results presented demonstrate the significant effect of illuminating the borders of the device along the gate and drain junctions due to external border and photo-voltaic effects.

Original languageBritish English
Title of host publicationICECS 2003 - Proceedings of the 2003 10th IEEE International Conference on Electronics, Circuits and Systems
Pages1-3
Number of pages3
DOIs
StatePublished - 2003
Event2003 10th IEEE International Conference on Electronics, Circuits and Systems, ICECS2003 - Sharjah, United Arab Emirates
Duration: 14 Dec 200317 Dec 2003

Publication series

NameProceedings of the IEEE International Conference on Electronics, Circuits, and Systems
Volume1

Conference

Conference2003 10th IEEE International Conference on Electronics, Circuits and Systems, ICECS2003
Country/TerritoryUnited Arab Emirates
CitySharjah
Period14/12/0317/12/03

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