Dependency of IV characteristics of a MESFET device on frequency and electric field

J. Rodriguez-Tellez; N. T. Ali; Kahtan Mezher; T. Fernandez; A. Mediavilla; A. Tazon; G. Rafael

Dependency of IV characteristics of a MESFET device on frequency and electric field

J. Rodriguez-Tellez
, N. T. Ali
, Kahtan Mezher
, T. Fernandez
, A. Mediavilla
, A. Tazon
, G. Rafael

Electrical Engineering

Universidad de Cantabria

Research output: Contribution to specialist publication › Article

1 Scopus citations

Abstract

A new automated system for observing the dependence of the IV characteristics of GaAs MESFET devices on electric field, frequency and thermal effects is presented. The new procedure employs a pseudo-random pulse I/V measurement system. The results provide a clearer picture of the effects of these variables on the IV characteristics and show that these dependencies can be incorporated in the mobility figure for the device.

Original language	British English
Pages	72-89
Number of pages	18
Volume	46
No	11
Specialist publication	Microwave Journal
State	Published - Nov 2003

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@misc{5aff00deb8fc41a7afbf1b72cf3fea35,

title = "Dependency of IV characteristics of a MESFET device on frequency and electric field",

abstract = "A new automated system for observing the dependence of the IV characteristics of GaAs MESFET devices on electric field, frequency and thermal effects is presented. The new procedure employs a pseudo-random pulse I/V measurement system. The results provide a clearer picture of the effects of these variables on the IV characteristics and show that these dependencies can be incorporated in the mobility figure for the device.",

author = "J. Rodriguez-Tellez and Ali, \{N. T.\} and Kahtan Mezher and T. Fernandez and A. Mediavilla and A. Tazon and G. Rafael",

year = "2003",

month = nov,

language = "British English",

volume = "46",

pages = "72--89",

journal = "Microwave Journal",

issn = "0192-6225",

publisher = "Horizon House",

}

TY - GEN

T1 - Dependency of IV characteristics of a MESFET device on frequency and electric field

AU - Rodriguez-Tellez, J.

AU - Ali, N. T.

AU - Mezher, Kahtan

AU - Fernandez, T.

AU - Mediavilla, A.

AU - Tazon, A.

AU - Rafael, G.

PY - 2003/11

Y1 - 2003/11

N2 - A new automated system for observing the dependence of the IV characteristics of GaAs MESFET devices on electric field, frequency and thermal effects is presented. The new procedure employs a pseudo-random pulse I/V measurement system. The results provide a clearer picture of the effects of these variables on the IV characteristics and show that these dependencies can be incorporated in the mobility figure for the device.

AB - A new automated system for observing the dependence of the IV characteristics of GaAs MESFET devices on electric field, frequency and thermal effects is presented. The new procedure employs a pseudo-random pulse I/V measurement system. The results provide a clearer picture of the effects of these variables on the IV characteristics and show that these dependencies can be incorporated in the mobility figure for the device.

UR - https://www.scopus.com/pages/publications/0346335627

M3 - Article

AN - SCOPUS:0346335627

SN - 0192-6225

VL - 46

SP - 72

EP - 89

JO - Microwave Journal

JF - Microwave Journal

ER -

Dependency of IV characteristics of a MESFET device on frequency and electric field

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