Demonstration of aluminum doped ZnO as anti-reflection coating

Muhaira Al Eghfeli; Sabina Abdul Hadi; Nazek El Atab; Ammar Nayfeh

doi:10.1109/PVSC.2016.7750155

Demonstration of aluminum doped ZnO as anti-reflection coating

Muhaira Al Eghfeli
, Sabina Abdul Hadi
, Nazek El Atab
, Ammar Nayfeh

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

Here we demonstrate use of conductive Aluminum doped Zinc Oxide, Al:ZnO (AZO) layers as anti-reflective coating (ARC) for thin film a-Si and c-Si solar cells. Low temperature Atomic Layer Deposition is used for AZO growth. We report complex refractive index of AZO layers and performance of fabricated cells: AZO/100 nm a-Si and AZO/ 2 μm c-Si using ∼73 nm AZO ARC. The current density measured for fabricated AZO/a-Si was 5.1 mA/cm² and AZO/c-Si 19.72 mA/cm². 73 nm AZO completely minimizes reflection at 600 nm wavelength for c-Si cell.

Original language	British English
Title of host publication	2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2765-2769
Number of pages	5
ISBN (Electronic)	9781509027248
DOIs	https://doi.org/10.1109/PVSC.2016.7750155
State	Published - 18 Nov 2016
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: 5 Jun 2016 → 10 Jun 2016

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
Volume	2016-November
ISSN (Print)	0160-8371

Conference

Conference	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	5/06/16 → 10/06/16

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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10.1109/PVSC.2016.7750155

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Eghfeli, M. A., Hadi, S. A., Atab, N. E., & Nayfeh, A. (2016). Demonstration of aluminum doped ZnO as anti-reflection coating. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (pp. 2765-2769). Article 7750155 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7750155

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title = "Demonstration of aluminum doped ZnO as anti-reflection coating",

abstract = "Here we demonstrate use of conductive Aluminum doped Zinc Oxide, Al:ZnO (AZO) layers as anti-reflective coating (ARC) for thin film a-Si and c-Si solar cells. Low temperature Atomic Layer Deposition is used for AZO growth. We report complex refractive index of AZO layers and performance of fabricated cells: AZO/100 nm a-Si and AZO/ 2 μm c-Si using ∼73 nm AZO ARC. The current density measured for fabricated AZO/a-Si was 5.1 mA/cm2 and AZO/c-Si 19.72 mA/cm2. 73 nm AZO completely minimizes reflection at 600 nm wavelength for c-Si cell.",

author = "Eghfeli, \{Muhaira Al\} and Hadi, \{Sabina Abdul\} and Atab, \{Nazek El\} and Ammar Nayfeh",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 ; Conference date: 05-06-2016 Through 10-06-2016",

year = "2016",

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doi = "10.1109/PVSC.2016.7750155",

language = "British English",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

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Eghfeli, MA, Hadi, SA, Atab, NE & Nayfeh, A 2016, Demonstration of aluminum doped ZnO as anti-reflection coating. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016., 7750155, Conference Record of the IEEE Photovoltaic Specialists Conference, vol. 2016-November, Institute of Electrical and Electronics Engineers Inc., pp. 2765-2769, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 5/06/16. https://doi.org/10.1109/PVSC.2016.7750155

Demonstration of aluminum doped ZnO as anti-reflection coating. / Eghfeli, Muhaira Al; Hadi, Sabina Abdul; Atab, Nazek El et al.
2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 2765-2769 7750155 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - Here we demonstrate use of conductive Aluminum doped Zinc Oxide, Al:ZnO (AZO) layers as anti-reflective coating (ARC) for thin film a-Si and c-Si solar cells. Low temperature Atomic Layer Deposition is used for AZO growth. We report complex refractive index of AZO layers and performance of fabricated cells: AZO/100 nm a-Si and AZO/ 2 μm c-Si using ∼73 nm AZO ARC. The current density measured for fabricated AZO/a-Si was 5.1 mA/cm2 and AZO/c-Si 19.72 mA/cm2. 73 nm AZO completely minimizes reflection at 600 nm wavelength for c-Si cell.

AB - Here we demonstrate use of conductive Aluminum doped Zinc Oxide, Al:ZnO (AZO) layers as anti-reflective coating (ARC) for thin film a-Si and c-Si solar cells. Low temperature Atomic Layer Deposition is used for AZO growth. We report complex refractive index of AZO layers and performance of fabricated cells: AZO/100 nm a-Si and AZO/ 2 μm c-Si using ∼73 nm AZO ARC. The current density measured for fabricated AZO/a-Si was 5.1 mA/cm2 and AZO/c-Si 19.72 mA/cm2. 73 nm AZO completely minimizes reflection at 600 nm wavelength for c-Si cell.

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Demonstration of aluminum doped ZnO as anti-reflection coating

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