Abstract
Here we demonstrate use of conductive Aluminum doped Zinc Oxide, Al:ZnO (AZO) layers as anti-reflective coating (ARC) for thin film a-Si and c-Si solar cells. Low temperature Atomic Layer Deposition is used for AZO growth. We report complex refractive index of AZO layers and performance of fabricated cells: AZO/100 nm a-Si and AZO/ 2 μm c-Si using ∼73 nm AZO ARC. The current density measured for fabricated AZO/a-Si was 5.1 mA/cm2 and AZO/c-Si 19.72 mA/cm2. 73 nm AZO completely minimizes reflection at 600 nm wavelength for c-Si cell.
| Original language | British English |
|---|---|
| Title of host publication | 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 1888-1892 |
| Number of pages | 5 |
| ISBN (Electronic) | 9781509056057 |
| DOIs | |
| State | Published - 2017 |
| Event | 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: 25 Jun 2017 → 30 Jun 2017 |
Publication series
| Name | 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 |
|---|
Conference
| Conference | 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 |
|---|---|
| Country/Territory | United States |
| City | Washington |
| Period | 25/06/17 → 30/06/17 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
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