Demonstration and characterization of bipolar monolithic integrated circuits in 4H-SiC

Jeong Youb Lee, Shakti Singh, James A. Cooper

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34 Scopus citations

Abstract

A monolithic bipolar integrated circuit technology employing transistor-transistor logic (TTL) is demonstrated in 4H-SiC for the first time. Operating on a 15-V power supply, as required by the higher base-emitter voltage of SiC bipolar transistors, TTL inverters with a fan-out of ten exhibit high-level noise margin (NMH) of 1.5 V and low-level noise margin (NML) of 3.9 V at room temperature. The transient response of the fabricated SiC TTL gates is also characterized. The circuits operate satisfactorily from room temperature to above 300 °C, suggesting that SiC bipolar integrated circuits are promising candidates for high-temperature applications.

Original languageBritish English
Pages (from-to)1946-1953
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume55
Issue number8
DOIs
StatePublished - 2008

Keywords

  • High-temperature ICs
  • SiC ICs
  • Silicon carbide
  • Smart power
  • Transistor-transistor logic (TTL)

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