Delayed phase explosion during high-power nanosecond laser ablation of silicon

Quanming Lu; Samuel S. Mao; Xianglei Mao; Richard E. Russo

doi:10.1063/1.1473862

Delayed phase explosion during high-power nanosecond laser ablation of silicon

Quanming Lu, Samuel S. Mao, Xianglei Mao, Richard E. Russo

Mechanical & Nuclear Engineering

Lawrence Berkeley National Laboratory

Research output: Contribution to journal › Article › peer-review

178 Scopus citations

Abstract

An important parameter for high-irradiance laser ablation is the ablation crater depth, resulting from the interaction of individual laser pulses on a targeted surface. The crater depth for laser ablation of single-crystal silicon shows a dramatic increase at a laser intensity threshold of approximately 2×10¹⁰W/cm², above which, large (micron-sized) particulates were observed to eject from the target. We present an analysis of this threshold phenomenon and demonstrate that thermal diffusion and subsequent explosive boiling after the completion of the laser pulse is a possible mechanism for the observed dramatic increase of the ablation depth. Calculations based on this delayed phase explosion model provide a satisfactory estimate of the measurements. In addition, we find that the shielding of an expanding mass plasma during laser irradiation has a profound effect on this threshold phenomenon.

Original language	British English
Pages (from-to)	3072-3074
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	17
DOIs	https://doi.org/10.1063/1.1473862
State	Published - 29 Apr 2002

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@article{47662276785e4a598da4069a5f8774f9,

title = "Delayed phase explosion during high-power nanosecond laser ablation of silicon",

abstract = "An important parameter for high-irradiance laser ablation is the ablation crater depth, resulting from the interaction of individual laser pulses on a targeted surface. The crater depth for laser ablation of single-crystal silicon shows a dramatic increase at a laser intensity threshold of approximately 2×1010W/cm2, above which, large (micron-sized) particulates were observed to eject from the target. We present an analysis of this threshold phenomenon and demonstrate that thermal diffusion and subsequent explosive boiling after the completion of the laser pulse is a possible mechanism for the observed dramatic increase of the ablation depth. Calculations based on this delayed phase explosion model provide a satisfactory estimate of the measurements. In addition, we find that the shielding of an expanding mass plasma during laser irradiation has a profound effect on this threshold phenomenon.",

author = "Quanming Lu and Mao, {Samuel S.} and Xianglei Mao and Russo, {Richard E.}",

year = "2002",

month = apr,

day = "29",

doi = "10.1063/1.1473862",

language = "British English",

volume = "80",

pages = "3072--3074",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "17",

}

TY - JOUR

T1 - Delayed phase explosion during high-power nanosecond laser ablation of silicon

AU - Lu, Quanming

AU - Mao, Samuel S.

AU - Mao, Xianglei

AU - Russo, Richard E.

PY - 2002/4/29

Y1 - 2002/4/29

N2 - An important parameter for high-irradiance laser ablation is the ablation crater depth, resulting from the interaction of individual laser pulses on a targeted surface. The crater depth for laser ablation of single-crystal silicon shows a dramatic increase at a laser intensity threshold of approximately 2×1010W/cm2, above which, large (micron-sized) particulates were observed to eject from the target. We present an analysis of this threshold phenomenon and demonstrate that thermal diffusion and subsequent explosive boiling after the completion of the laser pulse is a possible mechanism for the observed dramatic increase of the ablation depth. Calculations based on this delayed phase explosion model provide a satisfactory estimate of the measurements. In addition, we find that the shielding of an expanding mass plasma during laser irradiation has a profound effect on this threshold phenomenon.

AB - An important parameter for high-irradiance laser ablation is the ablation crater depth, resulting from the interaction of individual laser pulses on a targeted surface. The crater depth for laser ablation of single-crystal silicon shows a dramatic increase at a laser intensity threshold of approximately 2×1010W/cm2, above which, large (micron-sized) particulates were observed to eject from the target. We present an analysis of this threshold phenomenon and demonstrate that thermal diffusion and subsequent explosive boiling after the completion of the laser pulse is a possible mechanism for the observed dramatic increase of the ablation depth. Calculations based on this delayed phase explosion model provide a satisfactory estimate of the measurements. In addition, we find that the shielding of an expanding mass plasma during laser irradiation has a profound effect on this threshold phenomenon.

UR - http://www.scopus.com/inward/record.url?scp=79956041274&partnerID=8YFLogxK

U2 - 10.1063/1.1473862

DO - 10.1063/1.1473862

M3 - Article

AN - SCOPUS:79956041274

SN - 0003-6951

VL - 80

SP - 3072

EP - 3074

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

Delayed phase explosion during high-power nanosecond laser ablation of silicon

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