Defect States in Cubic GaN Epilayer Grown on GaAs by Metalorganic Vapor Phase Epitaxy

S. J. Xu; C. T. Or; Q. Li; L. X. Zheng; M. H. Xie; Y. Tong; Hui Yang

doi:10.1002/1521-396X(200112)188:2<681::AID-PSSA681>3.0.CO;2-7

Defect States in Cubic GaN Epilayer Grown on GaAs by Metalorganic Vapor Phase Epitaxy

S. J. Xu, C. T. Or, Q. Li, L. X. Zheng, M. H. Xie, Y. Tong, Hui Yang

Mechanical & Nuclear Engineering

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5 Scopus citations

Abstract

Defect states in cubic GaN epilayers grown on GaAs were investigated with the photoluminescence technique. One shallow donor and two acceptors were identified to be involved in relevant optical transitions. The binding energies of the free excitons, the bound excitons, the donor and the acceptors were determined. These values are in good agreement with recent theoretical results.

Original language	British English
Pages (from-to)	681-685
Number of pages	5
Journal	Physica Status Solidi (A) Applied Research
Volume	188
Issue number	2
DOIs	https://doi.org/10.1002/1521-396X(200112)188:2<681::AID-PSSA681>3.0.CO;2-7
State	Published - Nov 2001

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10.1002/1521-396X(200112)188:2<681::AID-PSSA681>3.0.CO;2-7

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abstract = "Defect states in cubic GaN epilayers grown on GaAs were investigated with the photoluminescence technique. One shallow donor and two acceptors were identified to be involved in relevant optical transitions. The binding energies of the free excitons, the bound excitons, the donor and the acceptors were determined. These values are in good agreement with recent theoretical results.",

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AU - Xu, S. J.

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AU - Zheng, L. X.

AU - Xie, M. H.

AU - Tong, Y.

AU - Yang, Hui

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AB - Defect states in cubic GaN epilayers grown on GaAs were investigated with the photoluminescence technique. One shallow donor and two acceptors were identified to be involved in relevant optical transitions. The binding energies of the free excitons, the bound excitons, the donor and the acceptors were determined. These values are in good agreement with recent theoretical results.

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ER -

Defect States in Cubic GaN Epilayer Grown on GaAs by Metalorganic Vapor Phase Epitaxy

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