CVD diamond photoconductors for picosecond radiation pulse characterisation

F. Foulon; P. Bergonzo; C. Jany; A. Gicquel; T. Pochet

doi:10.1016/0925-9635(95)00466-1

CVD diamond photoconductors for picosecond radiation pulse characterisation

F. Foulon
, P. Bergonzo
, C. Jany
, A. Gicquel
, T. Pochet

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

〈100〉-, 〈110〉- and non-textured polycrystalline diamond films deposited by microwave plasma enhanced chemical vapour deposition (MPCVD) have been used for the fabrication of resistive photoconductors. Such detectors can be used to measure the intensity and the temporal shape of pulsed radiation such as IR, visible, UV and X-ray. The photodetectors were characterised under fast pulsed Nd:Yag laser radiation (λ = 266, 532 and 1064 nm, 30 ps FWHM) and steady state X-ray (40 keV). Detector pulsed signals having FWHM in the range 350-600 ps were obtained. Film texture and nitrogen concentration in the film are found to have a significant influence on the detector response time and on carrier lifetime.

Original language	British English
Pages (from-to)	732-736
Number of pages	5
Journal	Diamond and Related Materials
Volume	5
Issue number	6-8
DOIs	https://doi.org/10.1016/0925-9635(95)00466-1
State	Published - May 1996

Keywords

CVD diamond film
Photoconductor
Radiation
Texture

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10.1016/0925-9635(95)00466-1

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title = "CVD diamond photoconductors for picosecond radiation pulse characterisation",

abstract = "〈100〉-, 〈110〉- and non-textured polycrystalline diamond films deposited by microwave plasma enhanced chemical vapour deposition (MPCVD) have been used for the fabrication of resistive photoconductors. Such detectors can be used to measure the intensity and the temporal shape of pulsed radiation such as IR, visible, UV and X-ray. The photodetectors were characterised under fast pulsed Nd:Yag laser radiation (λ = 266, 532 and 1064 nm, 30 ps FWHM) and steady state X-ray (40 keV). Detector pulsed signals having FWHM in the range 350-600 ps were obtained. Film texture and nitrogen concentration in the film are found to have a significant influence on the detector response time and on carrier lifetime.",

keywords = "CVD diamond film, Photoconductor, Radiation, Texture",

author = "F. Foulon and P. Bergonzo and C. Jany and A. Gicquel and T. Pochet",

year = "1996",

month = may,

doi = "10.1016/0925-9635(95)00466-1",

language = "British English",

volume = "5",

pages = "732--736",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier B.V.",

number = "6-8",

}

TY - JOUR

T1 - CVD diamond photoconductors for picosecond radiation pulse characterisation

AU - Foulon, F.

AU - Bergonzo, P.

AU - Jany, C.

AU - Gicquel, A.

AU - Pochet, T.

PY - 1996/5

Y1 - 1996/5

N2 - 〈100〉-, 〈110〉- and non-textured polycrystalline diamond films deposited by microwave plasma enhanced chemical vapour deposition (MPCVD) have been used for the fabrication of resistive photoconductors. Such detectors can be used to measure the intensity and the temporal shape of pulsed radiation such as IR, visible, UV and X-ray. The photodetectors were characterised under fast pulsed Nd:Yag laser radiation (λ = 266, 532 and 1064 nm, 30 ps FWHM) and steady state X-ray (40 keV). Detector pulsed signals having FWHM in the range 350-600 ps were obtained. Film texture and nitrogen concentration in the film are found to have a significant influence on the detector response time and on carrier lifetime.

AB - 〈100〉-, 〈110〉- and non-textured polycrystalline diamond films deposited by microwave plasma enhanced chemical vapour deposition (MPCVD) have been used for the fabrication of resistive photoconductors. Such detectors can be used to measure the intensity and the temporal shape of pulsed radiation such as IR, visible, UV and X-ray. The photodetectors were characterised under fast pulsed Nd:Yag laser radiation (λ = 266, 532 and 1064 nm, 30 ps FWHM) and steady state X-ray (40 keV). Detector pulsed signals having FWHM in the range 350-600 ps were obtained. Film texture and nitrogen concentration in the film are found to have a significant influence on the detector response time and on carrier lifetime.

KW - CVD diamond film

KW - Photoconductor

KW - Radiation

KW - Texture

UR - https://www.scopus.com/pages/publications/0000735194

U2 - 10.1016/0925-9635(95)00466-1

DO - 10.1016/0925-9635(95)00466-1

M3 - Article

AN - SCOPUS:0000735194

SN - 0925-9635

VL - 5

SP - 732

EP - 736

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 6-8

ER -

CVD diamond photoconductors for picosecond radiation pulse characterisation

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Keywords

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