Cubic-phase GaN light-emitting diodes

Hui Yang; L. X. Zheng; J. B. Li; X. J. Wang; D. P. Xu; Y. T. Wang; X. W. Hu; P. D. Han

doi:10.1063/1.123019

Cubic-phase GaN light-emitting diodes

Hui Yang, L. X. Zheng, J. B. Li, X. J. Wang, D. P. Xu, Y. T. Wang, X. W. Hu, P. D. Han

Mechanical & Nuclear Engineering

Research output: Contribution to journal › Article › peer-review

111 Scopus citations

Abstract

The feasibility of growing device-quality cubic GaN/GaAs(001) films by metal organic chemical vapor deposition has been demonstrated. The optical quality of the GaN films was characterized by room-temperature photoluminescence measurements, which shows a full width at half maximum of 46 meV. The structural quality of the films was investigated by transmission electron microscopy. There are submicron-size grains free from threading dislocations and stacking faults. More importantly, a cubic-phase GaN blue light-emitting diode has been fabricated. The device process, which is very simple and compatible with current GaAs technology, indicates a promising future for the blue light-emitting diode.

Original language	British English
Pages (from-to)	2498-2500
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	17
DOIs	https://doi.org/10.1063/1.123019
State	Published - 26 Apr 1999

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title = "Cubic-phase GaN light-emitting diodes",

abstract = "The feasibility of growing device-quality cubic GaN/GaAs(001) films by metal organic chemical vapor deposition has been demonstrated. The optical quality of the GaN films was characterized by room-temperature photoluminescence measurements, which shows a full width at half maximum of 46 meV. The structural quality of the films was investigated by transmission electron microscopy. There are submicron-size grains free from threading dislocations and stacking faults. More importantly, a cubic-phase GaN blue light-emitting diode has been fabricated. The device process, which is very simple and compatible with current GaAs technology, indicates a promising future for the blue light-emitting diode.",

author = "Hui Yang and Zheng, {L. X.} and Li, {J. B.} and Wang, {X. J.} and Xu, {D. P.} and Wang, {Y. T.} and Hu, {X. W.} and Han, {P. D.}",

year = "1999",

month = apr,

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doi = "10.1063/1.123019",

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T1 - Cubic-phase GaN light-emitting diodes

AU - Yang, Hui

AU - Zheng, L. X.

AU - Li, J. B.

AU - Wang, X. J.

AU - Xu, D. P.

AU - Wang, Y. T.

AU - Hu, X. W.

AU - Han, P. D.

PY - 1999/4/26

Y1 - 1999/4/26

N2 - The feasibility of growing device-quality cubic GaN/GaAs(001) films by metal organic chemical vapor deposition has been demonstrated. The optical quality of the GaN films was characterized by room-temperature photoluminescence measurements, which shows a full width at half maximum of 46 meV. The structural quality of the films was investigated by transmission electron microscopy. There are submicron-size grains free from threading dislocations and stacking faults. More importantly, a cubic-phase GaN blue light-emitting diode has been fabricated. The device process, which is very simple and compatible with current GaAs technology, indicates a promising future for the blue light-emitting diode.

AB - The feasibility of growing device-quality cubic GaN/GaAs(001) films by metal organic chemical vapor deposition has been demonstrated. The optical quality of the GaN films was characterized by room-temperature photoluminescence measurements, which shows a full width at half maximum of 46 meV. The structural quality of the films was investigated by transmission electron microscopy. There are submicron-size grains free from threading dislocations and stacking faults. More importantly, a cubic-phase GaN blue light-emitting diode has been fabricated. The device process, which is very simple and compatible with current GaAs technology, indicates a promising future for the blue light-emitting diode.

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U2 - 10.1063/1.123019

DO - 10.1063/1.123019

M3 - Article

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SN - 0003-6951

VL - 74

SP - 2498

EP - 2500

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

Cubic-phase GaN light-emitting diodes

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