Cubic-phase GaN light-emitting diodes

Hui Yang, L. X. Zheng, J. B. Li, X. J. Wang, D. P. Xu, Y. T. Wang, X. W. Hu, P. D. Han

Research output: Contribution to journalArticlepeer-review

110 Scopus citations

Abstract

The feasibility of growing device-quality cubic GaN/GaAs(001) films by metal organic chemical vapor deposition has been demonstrated. The optical quality of the GaN films was characterized by room-temperature photoluminescence measurements, which shows a full width at half maximum of 46 meV. The structural quality of the films was investigated by transmission electron microscopy. There are submicron-size grains free from threading dislocations and stacking faults. More importantly, a cubic-phase GaN blue light-emitting diode has been fabricated. The device process, which is very simple and compatible with current GaAs technology, indicates a promising future for the blue light-emitting diode.

Original languageBritish English
Pages (from-to)2498-2500
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number17
DOIs
StatePublished - 26 Apr 1999

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