Covalently interconnected transition metal dichalcogenide networks via defect engineering for high-performance electronic devices

Stefano Ippolito, Adam G. Kelly, Rafael Furlan de Oliveira, Marc Antoine Stoeckel, Daniel Iglesias, Ahin Roy, Clive Downing, Zan Bian, Lucia Lombardi, Yarjan Abdul Samad, Valeria Nicolosi, Andrea C. Ferrari, Jonathan N. Coleman, Paolo Samorì

Research output: Contribution to journalArticlepeer-review

79 Scopus citations

Abstract

Solution-processed semiconducting transition metal dichalcogenides are at the centre of an ever-increasing research effort in printed (opto)electronics. However, device performance is limited by structural defects resulting from the exfoliation process and poor inter-flake electronic connectivity. Here, we report a new molecular strategy to boost the electrical performance of transition metal dichalcogenide-based devices via the use of dithiolated conjugated molecules, to simultaneously heal sulfur vacancies in solution-processed transition metal disulfides and covalently bridge adjacent flakes, thereby promoting percolation pathways for the charge transport. We achieve a reproducible increase by one order of magnitude in field-effect mobility (µFE), current ratio (ION/IOFF) and switching time (τS) for liquid-gated transistors, reaching 10−2 cm2 V−1 s−1, 104 and 18 ms, respectively. Our functionalization strategy is a universal route to simultaneously enhance the electronic connectivity in transition metal disulfide networks and tailor on demand their physicochemical properties according to the envisioned applications.

Original languageBritish English
Pages (from-to)592-598
Number of pages7
JournalNature Nanotechnology
Volume16
Issue number5
DOIs
StatePublished - May 2021

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