Copper-doped CdTe films with improved hole mobility

Zhixun Ma, Kin Man Yu, Lei Liu, Lan Wang, Dale L. Perry, Wladek Walukiewicz, Peter Yu, Samuel S. Mao

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


Copper-doped CdTe films have been grown by the laser epitaxy approach. X-ray diffraction, Rutherford backscattering, and photoreflectance spectroscopy were utilized to characterize the CdTe:Cu films. Structural analysis suggests that the growth of CdTe:Cu on GaAs(100) is initiated along the (100) orientation, which changes to the (111) direction after the film thickness exceeds 400 nm. Hall effect measurements indicate that copper doping can achieve hole mobility over 150 cm2 V s at room temperature.

Original languageBritish English
Article number092113
JournalApplied Physics Letters
Issue number9
StatePublished - 2007


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