Copper-doped CdTe films with improved hole mobility

Zhixun Ma; Kin Man Yu; Lei Liu; Lan Wang; Dale L. Perry; Wladek Walukiewicz; Peter Yu; Samuel S. Mao

doi:10.1063/1.2778455

Copper-doped CdTe films with improved hole mobility

Zhixun Ma, Kin Man Yu, Lei Liu, Lan Wang, Dale L. Perry, Wladek Walukiewicz, Peter Yu, Samuel S. Mao

Mechanical & Nuclear Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Copper-doped CdTe films have been grown by the laser epitaxy approach. X-ray diffraction, Rutherford backscattering, and photoreflectance spectroscopy were utilized to characterize the CdTe:Cu films. Structural analysis suggests that the growth of CdTe:Cu on GaAs(100) is initiated along the (100) orientation, which changes to the (111) direction after the film thickness exceeds 400 nm. Hall effect measurements indicate that copper doping can achieve hole mobility over 150 cm2 V s at room temperature.

Original language	British English
Article number	092113
Journal	Applied Physics Letters
Volume	91
Issue number	9
DOIs	https://doi.org/10.1063/1.2778455
State	Published - 2007

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title = "Copper-doped CdTe films with improved hole mobility",

abstract = "Copper-doped CdTe films have been grown by the laser epitaxy approach. X-ray diffraction, Rutherford backscattering, and photoreflectance spectroscopy were utilized to characterize the CdTe:Cu films. Structural analysis suggests that the growth of CdTe:Cu on GaAs(100) is initiated along the (100) orientation, which changes to the (111) direction after the film thickness exceeds 400 nm. Hall effect measurements indicate that copper doping can achieve hole mobility over 150 cm2 V s at room temperature.",

author = "Zhixun Ma and Yu, {Kin Man} and Lei Liu and Lan Wang and Perry, {Dale L.} and Wladek Walukiewicz and Peter Yu and Mao, {Samuel S.}",

note = "Funding Information: This research has been supported by the U.S. Department of Energy, NNSA/NA-22, under Contract No. DE-AC02-05CH11231.",

year = "2007",

doi = "10.1063/1.2778455",

language = "British English",

volume = "91",

journal = "Applied Physics Letters",

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T1 - Copper-doped CdTe films with improved hole mobility

AU - Ma, Zhixun

AU - Yu, Kin Man

AU - Liu, Lei

AU - Wang, Lan

AU - Perry, Dale L.

AU - Walukiewicz, Wladek

AU - Yu, Peter

AU - Mao, Samuel S.

N1 - Funding Information: This research has been supported by the U.S. Department of Energy, NNSA/NA-22, under Contract No. DE-AC02-05CH11231.

PY - 2007

Y1 - 2007

N2 - Copper-doped CdTe films have been grown by the laser epitaxy approach. X-ray diffraction, Rutherford backscattering, and photoreflectance spectroscopy were utilized to characterize the CdTe:Cu films. Structural analysis suggests that the growth of CdTe:Cu on GaAs(100) is initiated along the (100) orientation, which changes to the (111) direction after the film thickness exceeds 400 nm. Hall effect measurements indicate that copper doping can achieve hole mobility over 150 cm2 V s at room temperature.

AB - Copper-doped CdTe films have been grown by the laser epitaxy approach. X-ray diffraction, Rutherford backscattering, and photoreflectance spectroscopy were utilized to characterize the CdTe:Cu films. Structural analysis suggests that the growth of CdTe:Cu on GaAs(100) is initiated along the (100) orientation, which changes to the (111) direction after the film thickness exceeds 400 nm. Hall effect measurements indicate that copper doping can achieve hole mobility over 150 cm2 V s at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=34548438043&partnerID=8YFLogxK

U2 - 10.1063/1.2778455

DO - 10.1063/1.2778455

M3 - Article

AN - SCOPUS:34548438043

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 092113

ER -

Copper-doped CdTe films with improved hole mobility

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