TY - JOUR
T1 - Computational discovery of two-dimensional rare-earth iodides
T2 - promising ferrovalley materials for valleytronics
AU - Sharan, Abhishek
AU - Lany, Stephan
AU - Singh, Nirpendra
N1 - Funding Information:
Authors acknowledge the financial support from Khalifa University of Science and Technology under the startup grant FSU-2020-11/2020. The authors also wish to acknowledge the contribution of Khalifa University’s high-performance computing and research computing facilities to the results of this research. The National Renewable Energy Laboratory is operated and managed for the US Department of Energy by the Alliance for Sustainable Energy, LLC, under Contract No. DE-AC36-08GO28308.
Publisher Copyright:
© 2022 IOP Publishing Ltd.
PY - 2023/1
Y1 - 2023/1
N2 - Two-dimensional Ferrovalley materials with intrinsic valley polarization are rare but highly promising for valley-based nonvolatile random access memory and valley filter devices. These ferromagnetic materials exhibit valleys at or near the Fermi level with intrinsic magnetism. The strong coupling between magnetism and spin-orbit coupling induces intrinsic valley polarization. Using Kinetically Limited Minimization, an unconstrained crystal structure prediction algorithm, and prototype sampling based on first-principles calculations, we have discovered new Ferrovalley materials, rare-earth iodides RI2, where R is a rare-earth element belonging to Sc, Y, or La-Lu, and I is Iodine. The rare-earth iodides are layered and demonstrate either 2H, 1T, or 1Td phase as the ground state in bulk, analogous to transition metal dichalcogenides (TMDCs). The calculated exfoliation energy of monolayers (MLs) is comparable to that of graphene and TMDCs, suggesting possible experimental synthesis. The MLs in the 2H phase exhibit ferromagnetism due to unpaired electrons in d and f orbitals. Throughout the rare-earth series, d bands have valley polarization at K and K ‾ points in the Brillouin zone in the vicinity of the Fermi level. Large intrinsic valley polarization in the range of 15-143 meV without external stimuli is observed in these Ferrovalley materials, which can be enhanced further by applying an in-plane bi-axial strain. These valleys can selectively be probed and manipulated for information storage and processing, potentially offering superior performance beyond conventional electronics and spintronics. We further show that the 2H ferromagnetic phase of RI2 MLs possesses non-zero Berry curvature and exhibits anomalous valley Hall effect with considerable anomalous Hall conductivity. Our work will incite exploratory synthesis of the predicted Ferrovalley materials and their application in valleytronics and beyond.
AB - Two-dimensional Ferrovalley materials with intrinsic valley polarization are rare but highly promising for valley-based nonvolatile random access memory and valley filter devices. These ferromagnetic materials exhibit valleys at or near the Fermi level with intrinsic magnetism. The strong coupling between magnetism and spin-orbit coupling induces intrinsic valley polarization. Using Kinetically Limited Minimization, an unconstrained crystal structure prediction algorithm, and prototype sampling based on first-principles calculations, we have discovered new Ferrovalley materials, rare-earth iodides RI2, where R is a rare-earth element belonging to Sc, Y, or La-Lu, and I is Iodine. The rare-earth iodides are layered and demonstrate either 2H, 1T, or 1Td phase as the ground state in bulk, analogous to transition metal dichalcogenides (TMDCs). The calculated exfoliation energy of monolayers (MLs) is comparable to that of graphene and TMDCs, suggesting possible experimental synthesis. The MLs in the 2H phase exhibit ferromagnetism due to unpaired electrons in d and f orbitals. Throughout the rare-earth series, d bands have valley polarization at K and K ‾ points in the Brillouin zone in the vicinity of the Fermi level. Large intrinsic valley polarization in the range of 15-143 meV without external stimuli is observed in these Ferrovalley materials, which can be enhanced further by applying an in-plane bi-axial strain. These valleys can selectively be probed and manipulated for information storage and processing, potentially offering superior performance beyond conventional electronics and spintronics. We further show that the 2H ferromagnetic phase of RI2 MLs possesses non-zero Berry curvature and exhibits anomalous valley Hall effect with considerable anomalous Hall conductivity. Our work will incite exploratory synthesis of the predicted Ferrovalley materials and their application in valleytronics and beyond.
KW - first-principles calculations
KW - materials discovery
KW - rare earth iodides
KW - valleytronics
UR - https://www.scopus.com/pages/publications/85145570041
U2 - 10.1088/2053-1583/acab72
DO - 10.1088/2053-1583/acab72
M3 - Article
AN - SCOPUS:85145570041
SN - 2053-1583
VL - 10
JO - 2D Materials
JF - 2D Materials
IS - 1
M1 - 015021
ER -