@inproceedings{eca8677c9d0345bbb80bc9c991809b35,
title = "Comprehensive investigation on current imbalance among parallel chips inside MW-scale IGBT power modules",
abstract = "With the demands for increasing the power rating and improving reliability level of the high power IGBT modules, there are further needs of understanding how to achieve stable paralleling and identical current sharing between the chips. This paper investigates the stray parameters imbalance among parallel chips inside the 1.7 kV/1 kA high power IGBT modules at different frequencies by Ansys Q3D parastics extractor. The resulted current imbalance is further confirmed by experimental measurement.",
keywords = "Current Imbalance, Finite Element Method, Insulated-Gate Bipolar Transistor (IGBT), Power Modules",
author = "Rui Wu and Liudmila Smirnova and Huai Wang and Francesco Iannuzzo and Frede Blaabjerg",
note = "Publisher Copyright: {\textcopyright} 2015 Korean Institute of Power Electronics.; 9th International Conference on Power Electronics - ECCE Asia, ICPE 2015-ECCE Asia ; Conference date: 01-06-2015 Through 05-06-2015",
year = "2015",
month = jul,
day = "27",
doi = "10.1109/ICPE.2015.7167881",
language = "British English",
series = "9th International Conference on Power Electronics - ECCE Asia: {"}Green World with Power Electronics{"}, ICPE 2015-ECCE Asia",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "850--856",
booktitle = "9th International Conference on Power Electronics - ECCE Asia",
address = "United States",
}