Comprehensive investigation on current imbalance among parallel chips inside MW-scale IGBT power modules

Rui Wu, Liudmila Smirnova, Huai Wang, Francesco Iannuzzo, Frede Blaabjerg

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    39 Scopus citations

    Abstract

    With the demands for increasing the power rating and improving reliability level of the high power IGBT modules, there are further needs of understanding how to achieve stable paralleling and identical current sharing between the chips. This paper investigates the stray parameters imbalance among parallel chips inside the 1.7 kV/1 kA high power IGBT modules at different frequencies by Ansys Q3D parastics extractor. The resulted current imbalance is further confirmed by experimental measurement.

    Original languageBritish English
    Title of host publication9th International Conference on Power Electronics - ECCE Asia
    Subtitle of host publication"Green World with Power Electronics", ICPE 2015-ECCE Asia
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages850-856
    Number of pages7
    ISBN (Electronic)9788957082546
    DOIs
    StatePublished - 27 Jul 2015
    Event9th International Conference on Power Electronics - ECCE Asia, ICPE 2015-ECCE Asia - Seoul, Korea, Republic of
    Duration: 1 Jun 20155 Jun 2015

    Publication series

    Name9th International Conference on Power Electronics - ECCE Asia: "Green World with Power Electronics", ICPE 2015-ECCE Asia

    Conference

    Conference9th International Conference on Power Electronics - ECCE Asia, ICPE 2015-ECCE Asia
    Country/TerritoryKorea, Republic of
    CitySeoul
    Period1/06/155/06/15

    Keywords

    • Current Imbalance
    • Finite Element Method
    • Insulated-Gate Bipolar Transistor (IGBT)
    • Power Modules

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