Comparison of various GaAs materials used for gamma-ray pulses characterisation

F. Foulon; B. Brullot; C. Rubbelynck; P. Bergonzo; T. Pochet

Comparison of various GaAs materials used for gamma-ray pulses characterisation

F. Foulon
, B. Brullot
, C. Rubbelynck
, P. Bergonzo
, T. Pochet

91191

Research output: Contribution to conference › Paper › peer-review

Abstract

Gallium arsenide resistive photoconductors are widely used for the characterisation of picosecond radiation pulses. They are used to measure both the intensity and the temporal shape of the pulse. We have investigated the influence of the physical and electrical properties of high resistivity GaAs crystals (LEC, VGF) supplied by various manufacturers on the detector response to fast visible and gamma-ray pulses. The detectors characteristics: response time and sensitivity, were tested both before and after pre-irradiation with fission neutron at integrated doses in the range 5 × 10¹⁴ to 1 × 10¹⁶ neutrons/cm². The original GaAs material properties were found to have a significant influence on the neutron pre-irradiated photoconductor response times and sensitivities for integrated doses up to 1 × 10¹⁵ neutrons/cm².

Original language	British English
Pages	102-105
Number of pages	4
State	Published - 1995
Event	Proceedings of the 1995 IEEE Nuclear Science Symposium and Medical Imaging Conference. Part 1 (of 3) - San Francisco, CA, USA Duration: 21 Oct 1995 → 28 Oct 1995

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Conference	Proceedings of the 1995 IEEE Nuclear Science Symposium and Medical Imaging Conference. Part 1 (of 3)
City	San Francisco, CA, USA
Period	21/10/95 → 28/10/95

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title = "Comparison of various GaAs materials used for gamma-ray pulses characterisation",

abstract = "Gallium arsenide resistive photoconductors are widely used for the characterisation of picosecond radiation pulses. They are used to measure both the intensity and the temporal shape of the pulse. We have investigated the influence of the physical and electrical properties of high resistivity GaAs crystals (LEC, VGF) supplied by various manufacturers on the detector response to fast visible and gamma-ray pulses. The detectors characteristics: response time and sensitivity, were tested both before and after pre-irradiation with fission neutron at integrated doses in the range 5 × 1014 to 1 × 1016 neutrons/cm2. The original GaAs material properties were found to have a significant influence on the neutron pre-irradiated photoconductor response times and sensitivities for integrated doses up to 1 × 1015 neutrons/cm2.",

author = "F. Foulon and B. Brullot and C. Rubbelynck and P. Bergonzo and T. Pochet",

year = "1995",

language = "British English",

pages = "102--105",

note = "Proceedings of the 1995 IEEE Nuclear Science Symposium and Medical Imaging Conference. Part 1 (of 3) ; Conference date: 21-10-1995 Through 28-10-1995",

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TY - CONF

T1 - Comparison of various GaAs materials used for gamma-ray pulses characterisation

AU - Foulon, F.

AU - Brullot, B.

AU - Rubbelynck, C.

AU - Bergonzo, P.

AU - Pochet, T.

PY - 1995

Y1 - 1995

N2 - Gallium arsenide resistive photoconductors are widely used for the characterisation of picosecond radiation pulses. They are used to measure both the intensity and the temporal shape of the pulse. We have investigated the influence of the physical and electrical properties of high resistivity GaAs crystals (LEC, VGF) supplied by various manufacturers on the detector response to fast visible and gamma-ray pulses. The detectors characteristics: response time and sensitivity, were tested both before and after pre-irradiation with fission neutron at integrated doses in the range 5 × 1014 to 1 × 1016 neutrons/cm2. The original GaAs material properties were found to have a significant influence on the neutron pre-irradiated photoconductor response times and sensitivities for integrated doses up to 1 × 1015 neutrons/cm2.

AB - Gallium arsenide resistive photoconductors are widely used for the characterisation of picosecond radiation pulses. They are used to measure both the intensity and the temporal shape of the pulse. We have investigated the influence of the physical and electrical properties of high resistivity GaAs crystals (LEC, VGF) supplied by various manufacturers on the detector response to fast visible and gamma-ray pulses. The detectors characteristics: response time and sensitivity, were tested both before and after pre-irradiation with fission neutron at integrated doses in the range 5 × 1014 to 1 × 1016 neutrons/cm2. The original GaAs material properties were found to have a significant influence on the neutron pre-irradiated photoconductor response times and sensitivities for integrated doses up to 1 × 1015 neutrons/cm2.

UR - https://www.scopus.com/pages/publications/0029452878

M3 - Paper

AN - SCOPUS:0029452878

SP - 102

EP - 105

T2 - Proceedings of the 1995 IEEE Nuclear Science Symposium and Medical Imaging Conference. Part 1 (of 3)

Y2 - 21 October 1995 through 28 October 1995

ER -

Comparison of various GaAs materials used for gamma-ray pulses characterisation

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