Comparison of various GaAs materials used for gamma-ray pulses characterisation

F. Foulon; B. Brullot; C. Rubbelynck; P. Bergonzo; T. Pochet

doi:10.1109/23.507068

Comparison of various GaAs materials used for gamma-ray pulses characterisation

F. Foulon
, B. Brullot
, C. Rubbelynck
, P. Bergonzo
, T. Pochet

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Gallium arsenide resistive photoconductors are widely used for the characterisation of picosecond radiation pulses. They are used to measure both the intensity and the temporal shape of the pulse. We have investigated the influence of the physical and electrical properties of high resistivity GaAs crystals (LEC, VGF) supplied by various manufacturers on the detector response to fast visible and gamma-ray pulses. The detectors characteristics : response time and sensitivity, were tested both before and after pre-irradiation with fission neutron at integrated doses in the range 5 × 10¹⁴ to 1 × 10¹⁶ neutrons/cm². The original GaAs material properties were found to have a significant influence on the neutron pre-irradiated photoconductor response times and sensitivities for integrated doses up to 1 × 10¹⁵ neutrons/cm².

Original language	British English
Pages (from-to)	1372-1375
Number of pages	4
Journal	IEEE Transactions on Nuclear Science
Volume	43
Issue number	3 PART 2
DOIs	https://doi.org/10.1109/23.507068
State	Published - 1996

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title = "Comparison of various GaAs materials used for gamma-ray pulses characterisation",

abstract = "Gallium arsenide resistive photoconductors are widely used for the characterisation of picosecond radiation pulses. They are used to measure both the intensity and the temporal shape of the pulse. We have investigated the influence of the physical and electrical properties of high resistivity GaAs crystals (LEC, VGF) supplied by various manufacturers on the detector response to fast visible and gamma-ray pulses. The detectors characteristics : response time and sensitivity, were tested both before and after pre-irradiation with fission neutron at integrated doses in the range 5 × 1014 to 1 × 1016 neutrons/cm2. The original GaAs material properties were found to have a significant influence on the neutron pre-irradiated photoconductor response times and sensitivities for integrated doses up to 1 × 1015 neutrons/cm2.",

author = "F. Foulon and B. Brullot and C. Rubbelynck and P. Bergonzo and T. Pochet",

year = "1996",

doi = "10.1109/23.507068",

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T1 - Comparison of various GaAs materials used for gamma-ray pulses characterisation

AU - Foulon, F.

AU - Brullot, B.

AU - Rubbelynck, C.

AU - Bergonzo, P.

AU - Pochet, T.

PY - 1996

Y1 - 1996

N2 - Gallium arsenide resistive photoconductors are widely used for the characterisation of picosecond radiation pulses. They are used to measure both the intensity and the temporal shape of the pulse. We have investigated the influence of the physical and electrical properties of high resistivity GaAs crystals (LEC, VGF) supplied by various manufacturers on the detector response to fast visible and gamma-ray pulses. The detectors characteristics : response time and sensitivity, were tested both before and after pre-irradiation with fission neutron at integrated doses in the range 5 × 1014 to 1 × 1016 neutrons/cm2. The original GaAs material properties were found to have a significant influence on the neutron pre-irradiated photoconductor response times and sensitivities for integrated doses up to 1 × 1015 neutrons/cm2.

AB - Gallium arsenide resistive photoconductors are widely used for the characterisation of picosecond radiation pulses. They are used to measure both the intensity and the temporal shape of the pulse. We have investigated the influence of the physical and electrical properties of high resistivity GaAs crystals (LEC, VGF) supplied by various manufacturers on the detector response to fast visible and gamma-ray pulses. The detectors characteristics : response time and sensitivity, were tested both before and after pre-irradiation with fission neutron at integrated doses in the range 5 × 1014 to 1 × 1016 neutrons/cm2. The original GaAs material properties were found to have a significant influence on the neutron pre-irradiated photoconductor response times and sensitivities for integrated doses up to 1 × 1015 neutrons/cm2.

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M3 - Article

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SP - 1372

EP - 1375

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 3 PART 2

ER -

Comparison of various GaAs materials used for gamma-ray pulses characterisation

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