Abstract
The motivation of this paper is to bring into notice the establishment of two topologies: enhanced boost-quasi Z source inverter (EB-QZSI) and enhanced boost QZSI with an active switched network (EB/ASN-QZSI) which have poor performance than Extended switched capacitor quasi switched boost inverter (ESC-qSBI). However, ESC-qSBI has been developed before the EB-QZSI and EB/ASN-QZSI. The ESC-qSBI utilizes lesser number of inductors than the enhanced boost-quasi Z source inverter (EB-QZSI) and enhanced boost QZSI with an active switched network (EB/ASN-QZSI). In the presence of parasitics, ESC-qSBI has higher voltage gain than the EB-QZSI and EB/ASN-QZSI. Additionally, EB/ASC-QZSI has lower total voltage stress across diodes and capacitors as compared to EB-QZSI and EB/ASN-QZSI. The operation, steady state analysis, comparison and experimental analysis are discussed to prove the superorrity of ESC-qSBI over EB-QZSI and EB/ASN-QZSI.
| Original language | British English |
|---|---|
| Article number | 9405662 |
| Pages (from-to) | 61539-61547 |
| Number of pages | 9 |
| Journal | IEEE Access |
| Volume | 9 |
| DOIs | |
| State | Published - 2021 |
Keywords
- parasitic
- voltage gain
- voltage stress
- Z-source inverter