Comparative Analysis of Extended SC-qSBI with EB-QZSI and EB/ASN-QZSI

Avneet Kumar, Danyang Bao, Abdul R. Beig

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The motivation of this paper is to bring into notice the establishment of two topologies: enhanced boost-quasi Z source inverter (EB-QZSI) and enhanced boost QZSI with an active switched network (EB/ASN-QZSI) which have poor performance than Extended switched capacitor quasi switched boost inverter (ESC-qSBI). However, ESC-qSBI has been developed before the EB-QZSI and EB/ASN-QZSI. The ESC-qSBI utilizes lesser number of inductors than the enhanced boost-quasi Z source inverter (EB-QZSI) and enhanced boost QZSI with an active switched network (EB/ASN-QZSI). In the presence of parasitics, ESC-qSBI has higher voltage gain than the EB-QZSI and EB/ASN-QZSI. Additionally, EB/ASC-QZSI has lower total voltage stress across diodes and capacitors as compared to EB-QZSI and EB/ASN-QZSI. The operation, steady state analysis, comparison and experimental analysis are discussed to prove the superorrity of ESC-qSBI over EB-QZSI and EB/ASN-QZSI.

Original languageBritish English
Article number9405662
Pages (from-to)61539-61547
Number of pages9
JournalIEEE Access
Volume9
DOIs
StatePublished - 2021

Keywords

  • parasitic
  • voltage gain
  • voltage stress
  • Z-source inverter

Fingerprint

Dive into the research topics of 'Comparative Analysis of Extended SC-qSBI with EB-QZSI and EB/ASN-QZSI'. Together they form a unique fingerprint.

Cite this