Compact broadband ( O, E, S, C, L & U bands) silicon TE-pass polarizer based on ridge waveguide adiabatic S-bends

Humaira Zafar, Yanfen Zhai, Juan E. Villegas, Florent Ravaux, Kenneth L. Kennedy, Mauro F. Pereira, Mahmoud Rasras, Atif Shamim, Dalaver H. Anjum

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

A compact, ultra-broadband and high-performance silicon TE-pass polarizer is proposed and demonstrated experimentally. It is based on partially-etched (ridge) waveguide adiabatic S-bends, input/output tapers and side gratings on a silicon-on-insulator (SOI) platform. A compact footprint and weak back reflections are obtained due to the bent waveguide and the tapers, respectively. An extremely high extinction ratio is achieved by scattering the undesired light in the slab section using the side gratings. The 3D FDTD simulations show a TE loss less than 0.3 dB and an extinction ratio greater than 30 dB over a 500 nm wavelength range (1200 nm to 1700 nm). Measured results show a high TM loss (> 35 dB) and a low TE insertion loss (< 1.5 dB), over a 200 nm wavelength range (1450 nm to 1650 nm). The measured TE loss is < 0.6 dB at a communication wavelength of 1550 nm. The footprint of the optimized design is 65 μm × 20 μm.

Original languageBritish English
Pages (from-to)10087-10095
Number of pages9
JournalOptics Express
Volume30
Issue number6
DOIs
StatePublished - 14 Mar 2022

Fingerprint

Dive into the research topics of 'Compact broadband ( O, E, S, C, L & U bands) silicon TE-pass polarizer based on ridge waveguide adiabatic S-bends'. Together they form a unique fingerprint.

Cite this