Characterization of new a-Si:H Detectors fabricated from Amorphous Silicon deposited at High Rate by Helium enhanced PECVD

T. Pochet; A. Ilie; F. Foulon; B. Equer

doi:10.1109/23.322850

Characterization of new a-Si:H Detectors fabricated from Amorphous Silicon deposited at High Rate by Helium enhanced PECVD

T. Pochet, A. Ilie, F. Foulon, B. Equer

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Abstract

This paper is concerned with the characterization of new detectors fabricated from a-Si:H films deposited at high rates through the dilution of SiH4 in Helium by PECVD (Plasma Enhanced Chemical Vapor Deposition) technique. Rates up to ten times (5.5 µm/h) that of the standard technique are obtained. We have investigated the electrical characteristics depletion voltage, residual space charge density- of the helium diluted material and compared them to that of the standard material. Finally, the response of detectors, fabricated from both materials, to 5.5 MeV alpha particles are compared.

Original language	British English
Pages (from-to)	1014-1018
Number of pages	5
Journal	IEEE Transactions on Nuclear Science
Volume	41
Issue number	4
DOIs	https://doi.org/10.1109/23.322850
State	Published - Aug 1994

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abstract = "This paper is concerned with the characterization of new detectors fabricated from a-Si:H films deposited at high rates through the dilution of SiH4 in Helium by PECVD (Plasma Enhanced Chemical Vapor Deposition) technique. Rates up to ten times (5.5 µm/h) that of the standard technique are obtained. We have investigated the electrical characteristics depletion voltage, residual space charge density- of the helium diluted material and compared them to that of the standard material. Finally, the response of detectors, fabricated from both materials, to 5.5 MeV alpha particles are compared.",

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AU - Equer, B.

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AB - This paper is concerned with the characterization of new detectors fabricated from a-Si:H films deposited at high rates through the dilution of SiH4 in Helium by PECVD (Plasma Enhanced Chemical Vapor Deposition) technique. Rates up to ten times (5.5 µm/h) that of the standard technique are obtained. We have investigated the electrical characteristics depletion voltage, residual space charge density- of the helium diluted material and compared them to that of the standard material. Finally, the response of detectors, fabricated from both materials, to 5.5 MeV alpha particles are compared.

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Characterization of new a-Si:H Detectors fabricated from Amorphous Silicon deposited at High Rate by Helium enhanced PECVD

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