Characterization of new a-Si:H detectors fabricated from amorphous silicon deposited at high rate by helium enhanced PECVD

T. Pochet; A. Ilie; F. Foulon; B. Equer

Characterization of new a-Si:H detectors fabricated from amorphous silicon deposited at high rate by helium enhanced PECVD

T. Pochet, A. Ilie, F. Foulon, B. Equer

CEA/Saclay

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper is concerned with the characterization of new detectors fabricated from a-Si:H films deposited at high rates through the dilution of SiH₄ in Helium. Rates up to ten times (5.5 μm/h) that of the standard technique are obtained. We have investigated the electrical characteristics -depletion voltage, residual space charge density- of the helium diluted material and compared them to that of the standard material. Finally, the response of detectors, fabricated from both materials, to 5.5 MeV alpha particles are compared.

Original language	British English
Title of host publication	IEEE Nuclear Science Symposium & Medical Imaging Conference
Pages	450-454
Number of pages	5
Edition	pt 1
State	Published - 1994
Event	Proceedings of the 1993 IEEE Nuclear Science Symposium & Medical Imaging Conference - San Francisco, CA, USA Duration: 30 Oct 1993 → 6 Nov 1993

Publication series

Name	IEEE Nuclear Science Symposium & Medical Imaging Conference
Number	pt 1

Conference

Conference	Proceedings of the 1993 IEEE Nuclear Science Symposium & Medical Imaging Conference
City	San Francisco, CA, USA
Period	30/10/93 → 6/11/93

Cite this

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title = "Characterization of new a-Si:H detectors fabricated from amorphous silicon deposited at high rate by helium enhanced PECVD",

abstract = "This paper is concerned with the characterization of new detectors fabricated from a-Si:H films deposited at high rates through the dilution of SiH4 in Helium. Rates up to ten times (5.5 μm/h) that of the standard technique are obtained. We have investigated the electrical characteristics -depletion voltage, residual space charge density- of the helium diluted material and compared them to that of the standard material. Finally, the response of detectors, fabricated from both materials, to 5.5 MeV alpha particles are compared.",

author = "T. Pochet and A. Ilie and F. Foulon and B. Equer",

year = "1994",

language = "British English",

isbn = "0780314883",

series = "IEEE Nuclear Science Symposium & Medical Imaging Conference",

number = "pt 1",

pages = "450--454",

booktitle = "IEEE Nuclear Science Symposium & Medical Imaging Conference",

edition = "pt 1",

note = "Proceedings of the 1993 IEEE Nuclear Science Symposium & Medical Imaging Conference ; Conference date: 30-10-1993 Through 06-11-1993",

}

Pochet, T, Ilie, A, Foulon, F & Equer, B 1994, Characterization of new a-Si:H detectors fabricated from amorphous silicon deposited at high rate by helium enhanced PECVD. in IEEE Nuclear Science Symposium & Medical Imaging Conference. pt 1 edn, IEEE Nuclear Science Symposium & Medical Imaging Conference, no. pt 1, pp. 450-454, Proceedings of the 1993 IEEE Nuclear Science Symposium & Medical Imaging Conference, San Francisco, CA, USA, 30/10/93.

Characterization of new a-Si:H detectors fabricated from amorphous silicon deposited at high rate by helium enhanced PECVD. / Pochet, T.; Ilie, A.; Foulon, F. et al.
IEEE Nuclear Science Symposium & Medical Imaging Conference. pt 1. ed. 1994. p. 450-454 (IEEE Nuclear Science Symposium & Medical Imaging Conference; No. pt 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Characterization of new a-Si:H detectors fabricated from amorphous silicon deposited at high rate by helium enhanced PECVD

AU - Pochet, T.

AU - Ilie, A.

AU - Foulon, F.

AU - Equer, B.

PY - 1994

Y1 - 1994

N2 - This paper is concerned with the characterization of new detectors fabricated from a-Si:H films deposited at high rates through the dilution of SiH4 in Helium. Rates up to ten times (5.5 μm/h) that of the standard technique are obtained. We have investigated the electrical characteristics -depletion voltage, residual space charge density- of the helium diluted material and compared them to that of the standard material. Finally, the response of detectors, fabricated from both materials, to 5.5 MeV alpha particles are compared.

AB - This paper is concerned with the characterization of new detectors fabricated from a-Si:H films deposited at high rates through the dilution of SiH4 in Helium. Rates up to ten times (5.5 μm/h) that of the standard technique are obtained. We have investigated the electrical characteristics -depletion voltage, residual space charge density- of the helium diluted material and compared them to that of the standard material. Finally, the response of detectors, fabricated from both materials, to 5.5 MeV alpha particles are compared.

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M3 - Conference contribution

AN - SCOPUS:0028184843

SN - 0780314883

T3 - IEEE Nuclear Science Symposium & Medical Imaging Conference

SP - 450

EP - 454

BT - IEEE Nuclear Science Symposium & Medical Imaging Conference

T2 - Proceedings of the 1993 IEEE Nuclear Science Symposium & Medical Imaging Conference

Y2 - 30 October 1993 through 6 November 1993

ER -

Characterization of new a-Si:H detectors fabricated from amorphous silicon deposited at high rate by helium enhanced PECVD

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