TY - GEN
T1 - Catastrophic failure and fault-tolerant design of IGBT power electronic converters - An overview
AU - Wu, Rui
AU - Blaabjerg, Frede
AU - Wang, Huai
AU - Liserre, Marco
AU - Iannuzzo, Francesco
PY - 2013
Y1 - 2013
N2 - Reliability is one of the key issues for the application of Insulated Gate Bipolar Transistors (IGBTs) in power electronic converters. Many efforts have been devoted to the reduction of IGBT wear out failure induced by accumulated degradation and catastrophic failure triggered by single-event overstress. The wear out failure under field operation could be mitigated by scheduled maintenances based on lifetime prediction and condition monitoring. However, the catastrophic failure is difficult to be predicted and thus may lead to serious consequence of power electronic converters. To obtain a better understanding of catastrophic failure of IGBTs, the state-of-the-art research on their failure behaviors and failure mechanisms is presented in this paper. Moreover, various fault-tolerant design methods, to prevent converter level malfunctions in the event of IGBT failure, are also reviewed.
AB - Reliability is one of the key issues for the application of Insulated Gate Bipolar Transistors (IGBTs) in power electronic converters. Many efforts have been devoted to the reduction of IGBT wear out failure induced by accumulated degradation and catastrophic failure triggered by single-event overstress. The wear out failure under field operation could be mitigated by scheduled maintenances based on lifetime prediction and condition monitoring. However, the catastrophic failure is difficult to be predicted and thus may lead to serious consequence of power electronic converters. To obtain a better understanding of catastrophic failure of IGBTs, the state-of-the-art research on their failure behaviors and failure mechanisms is presented in this paper. Moreover, various fault-tolerant design methods, to prevent converter level malfunctions in the event of IGBT failure, are also reviewed.
KW - catastrophic failure
KW - fault torlerant circuit
KW - Insulated Gate Bipolar Transistor
KW - power electronics
UR - http://www.scopus.com/inward/record.url?scp=84893575169&partnerID=8YFLogxK
U2 - 10.1109/IECON.2013.6699187
DO - 10.1109/IECON.2013.6699187
M3 - Conference contribution
AN - SCOPUS:84893575169
SN - 9781479902248
T3 - IECON Proceedings (Industrial Electronics Conference)
SP - 507
EP - 513
BT - Proceedings, IECON 2013 - 39th Annual Conference of the IEEE Industrial Electronics Society
T2 - 39th Annual Conference of the IEEE Industrial Electronics Society, IECON 2013
Y2 - 10 November 2013 through 14 November 2013
ER -