Abstract
In2O3 pyramids and octahedrons were synthesized on a silicon substrate by catalyst-free and improved chemical vapor deposition in order to reduce the influence of undesired doping or impurities on the observed properties, directly from metallic indium by controlled oxidation. These single crystalline In2O3 structures have potential use in ultra-sensitive gas and chemical sensors.
| Original language | British English |
|---|---|
| Pages (from-to) | L9 |
| Journal | Journal of Alloys and Compounds |
| Volume | 480 |
| Issue number | 2 |
| DOIs | |
| State | Published - 8 Jul 2009 |
Keywords
- FESEM
- InO
- Octahedrons
- Pyramids
- TEM