Carbon doped 980 nm InGaAs strained quantum well lasers grown by metallorganic chemical-vapor deposition

Tao Yin; Peng Lian; Zuntu Xu; Changhua Chen; Hongdong Zhao; Deshu Zou; Jianxin Chen; Guo Gao; Jinyu Du; Changbao Tao; Guangdi Shen; Hui Lu; Lianxi Zheng; Lianghui Chen

Carbon doped 980 nm InGaAs strained quantum well lasers grown by metallorganic chemical-vapor deposition

Tao Yin, Peng Lian, Zuntu Xu, Changhua Chen, Hongdong Zhao, Deshu Zou, Jianxin Chen, Guo Gao, Jinyu Du, Changbao Tao, Guangdi Shen, Hui Lu, Lianxi Zheng, Lianghui Chen

Mechanical & Nuclear Engineering

Beijing Polytechnic Univ

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Graded-index separate-confinement (GRIN-SCH) strained quantum well (QW) InGaAs/GaAs/GaAlAs lasers grown by metallorganic chemical-vapor deposition (MOCVD) with carbon tetrachloride used as p-doped source for upper cladding layer and the capping layer are studied. By SIMS and electrochemical capacitance-voltage measurements, the desirable quantum well structure and the suitable doping and carrier concentrations profiles are found to be obtained. The grown crystals show good optical characteristics through the photoluminescence (PL) spectrum measurement of the upper cladding layer and the active layer. The oxide-stripe and the ridge waveguide stripe lasers are fabricated, the lower threshold current densities 160 A/cm² (uncoated) with 1500 μm long cavity are obtained. The differential quantum efficiency and the output power can be up to 0.4 W/A and 500 mw (uncoated).

Original language	British English
Pages (from-to)	48-53
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3547
State	Published - 1998
Event	Proceedings of the 1998 Conference on Semiconductor Lasers III - Beijing, China Duration: 16 Sep 1998 → 18 Sep 1998

Cite this

@article{92f8514a1abe488198b04f67f1f753a2,

title = "Carbon doped 980 nm InGaAs strained quantum well lasers grown by metallorganic chemical-vapor deposition",

abstract = "Graded-index separate-confinement (GRIN-SCH) strained quantum well (QW) InGaAs/GaAs/GaAlAs lasers grown by metallorganic chemical-vapor deposition (MOCVD) with carbon tetrachloride used as p-doped source for upper cladding layer and the capping layer are studied. By SIMS and electrochemical capacitance-voltage measurements, the desirable quantum well structure and the suitable doping and carrier concentrations profiles are found to be obtained. The grown crystals show good optical characteristics through the photoluminescence (PL) spectrum measurement of the upper cladding layer and the active layer. The oxide-stripe and the ridge waveguide stripe lasers are fabricated, the lower threshold current densities 160 A/cm2 (uncoated) with 1500 μm long cavity are obtained. The differential quantum efficiency and the output power can be up to 0.4 W/A and 500 mw (uncoated).",

author = "Tao Yin and Peng Lian and Zuntu Xu and Changhua Chen and Hongdong Zhao and Deshu Zou and Jianxin Chen and Guo Gao and Jinyu Du and Changbao Tao and Guangdi Shen and Hui Lu and Lianxi Zheng and Lianghui Chen",

year = "1998",

language = "British English",

volume = "3547",

pages = "48--53",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Proceedings of the 1998 Conference on Semiconductor Lasers III ; Conference date: 16-09-1998 Through 18-09-1998",

}

TY - JOUR

T1 - Carbon doped 980 nm InGaAs strained quantum well lasers grown by metallorganic chemical-vapor deposition

AU - Yin, Tao

AU - Lian, Peng

AU - Xu, Zuntu

AU - Chen, Changhua

AU - Zhao, Hongdong

AU - Zou, Deshu

AU - Chen, Jianxin

AU - Gao, Guo

AU - Du, Jinyu

AU - Tao, Changbao

AU - Shen, Guangdi

AU - Lu, Hui

AU - Zheng, Lianxi

AU - Chen, Lianghui

PY - 1998

Y1 - 1998

N2 - Graded-index separate-confinement (GRIN-SCH) strained quantum well (QW) InGaAs/GaAs/GaAlAs lasers grown by metallorganic chemical-vapor deposition (MOCVD) with carbon tetrachloride used as p-doped source for upper cladding layer and the capping layer are studied. By SIMS and electrochemical capacitance-voltage measurements, the desirable quantum well structure and the suitable doping and carrier concentrations profiles are found to be obtained. The grown crystals show good optical characteristics through the photoluminescence (PL) spectrum measurement of the upper cladding layer and the active layer. The oxide-stripe and the ridge waveguide stripe lasers are fabricated, the lower threshold current densities 160 A/cm2 (uncoated) with 1500 μm long cavity are obtained. The differential quantum efficiency and the output power can be up to 0.4 W/A and 500 mw (uncoated).

AB - Graded-index separate-confinement (GRIN-SCH) strained quantum well (QW) InGaAs/GaAs/GaAlAs lasers grown by metallorganic chemical-vapor deposition (MOCVD) with carbon tetrachloride used as p-doped source for upper cladding layer and the capping layer are studied. By SIMS and electrochemical capacitance-voltage measurements, the desirable quantum well structure and the suitable doping and carrier concentrations profiles are found to be obtained. The grown crystals show good optical characteristics through the photoluminescence (PL) spectrum measurement of the upper cladding layer and the active layer. The oxide-stripe and the ridge waveguide stripe lasers are fabricated, the lower threshold current densities 160 A/cm2 (uncoated) with 1500 μm long cavity are obtained. The differential quantum efficiency and the output power can be up to 0.4 W/A and 500 mw (uncoated).

UR - http://www.scopus.com/inward/record.url?scp=0032305427&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032305427

SN - 0277-786X

VL - 3547

SP - 48

EP - 53

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Proceedings of the 1998 Conference on Semiconductor Lasers III

Y2 - 16 September 1998 through 18 September 1998

ER -

Carbon doped 980 nm InGaAs strained quantum well lasers grown by metallorganic chemical-vapor deposition

Abstract

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