Boron doping of silicon by excimer laser irradiation in a reactive atmosphere - The incorporation mechanism

A. Slaoui, F. Foulon, R. Stuck, P. Siffert

    Research output: Contribution to journalArticlepeer-review

    7 Scopus citations

    Abstract

    UV excimer lasers have been used to dope semiconductors by a one-step process in which the laser serves both to melt a controlled thickness of a sample placed in dopant ambient and to photodissociate the dopant molecules themselves. Here we report the boron doping of silicon by means of an ArF (193 nm) excimer laser. Dopant atoms are obtained by photolysis of BCl3 or pyrolysis of BF3 molecules. The doping is performed both in gas ambient and using only an adsorbed layer. We have investigated the dependence of doping parameters such as laser pulse repetition and gas pressure on the subsequent boron impurity profiles and the dopant incorporation rate. These results indicate that the laser doping process is dopant-flux limited for BF3 and externally rate limited for BCl3.

    Original languageBritish English
    Pages (from-to)479-484
    Number of pages6
    JournalApplied Physics A Solids and Surfaces
    Volume50
    Issue number5
    DOIs
    StatePublished - May 1990

    Keywords

    • 42.60K
    • 61.70T
    • 79.20D
    • 82.65

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