Bipolar integrated circuits in 4H-SiC

Shakti Singh, James A. Cooper

Research output: Contribution to journalArticlepeer-review

55 Scopus citations

Abstract

Due to its wide band gap, 4H-SiC is potentially capable of sustained operation at temperatures well above 600 °C, but current devices are limited to lower temperatures by the stability of the metallization and passivation layers. SiC bipolar transistors are capable of operation at temperatures above 300 °C, as they do not have an oxide layer under high electric field and hence do not suffer from oxide reliability issues. In this paper, we describe bipolar digital integrated circuits on semi-insulating 4H-SiC that operate over a wide range of supply voltage and temperature, demonstrating the potential of SiC for high-temperature small-scale integrated-circuit applications.

Original languageBritish English
Article number5711658
Pages (from-to)1084-1090
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume58
Issue number4
DOIs
StatePublished - Apr 2011

Keywords

  • High-temperature integrated circuits (ICs)
  • SiC ICs
  • silicon carbide (SiC)
  • smart power
  • transistortransistor logic (TTL)

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