Behavior of n-ZnO nanorods/p-Si heterojunction devices at higher temperatures

N. Koteeswara Reddy; Q. Ahsanulhaq; J. H. Kim; Y. B. Hahn

doi:10.1063/1.2839579

Behavior of n-ZnO nanorods/p-Si heterojunction devices at higher temperatures

N. Koteeswara Reddy, Q. Ahsanulhaq, J. H. Kim, Y. B. Hahn

Chemistry

Chonbuk National University

Research output: Contribution to journal › Article › peer-review

129 Scopus citations

Abstract

This work explores the temperature dependent heterojunction behavior of n -type zinc oxide (ZnO) nanorods/ ZnOp-Si diodes. The as-grown ZnO nanorod structures on ZnO coated p-Si substrates are single crystalline and grown along the [001] direction. The p-n diode showed an excellent stability over the temperature range of 20-150 °C due to highly doped p -type Si substrate. The turn-on and breakdown voltage of the device slightly decreased with an increase of temperature whereas the saturation current of the device increased from 0.42 to 0.67 μA. The device behavior at different temperatures in forward as well as reverse biased conditions are studied and reported.

Original language	British English
Article number	043127
Journal	Applied Physics Letters
Volume	92
Issue number	4
DOIs	https://doi.org/10.1063/1.2839579
State	Published - 2008

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title = "Behavior of n-ZnO nanorods/p-Si heterojunction devices at higher temperatures",

abstract = "This work explores the temperature dependent heterojunction behavior of n -type zinc oxide (ZnO) nanorods/ ZnOp-Si diodes. The as-grown ZnO nanorod structures on ZnO coated p-Si substrates are single crystalline and grown along the [001] direction. The p-n diode showed an excellent stability over the temperature range of 20-150 °C due to highly doped p -type Si substrate. The turn-on and breakdown voltage of the device slightly decreased with an increase of temperature whereas the saturation current of the device increased from 0.42 to 0.67 μA. The device behavior at different temperatures in forward as well as reverse biased conditions are studied and reported.",

author = "{Koteeswara Reddy}, N. and Q. Ahsanulhaq and Kim, {J. H.} and Hahn, {Y. B.}",

note = "Funding Information: This work is supported by the BK21 project-2007 and the Korea Research Foundation grant (KRF-2005-005-J07502) funded by the Korean government (MOEHRD) and the authors also acknowledge the KBSI, Jeonju center for the help of FE-SEM and AFM studies.",

year = "2008",

doi = "10.1063/1.2839579",

language = "British English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Behavior of n-ZnO nanorods/p-Si heterojunction devices at higher temperatures

AU - Koteeswara Reddy, N.

AU - Ahsanulhaq, Q.

AU - Kim, J. H.

AU - Hahn, Y. B.

N1 - Funding Information: This work is supported by the BK21 project-2007 and the Korea Research Foundation grant (KRF-2005-005-J07502) funded by the Korean government (MOEHRD) and the authors also acknowledge the KBSI, Jeonju center for the help of FE-SEM and AFM studies.

PY - 2008

Y1 - 2008

N2 - This work explores the temperature dependent heterojunction behavior of n -type zinc oxide (ZnO) nanorods/ ZnOp-Si diodes. The as-grown ZnO nanorod structures on ZnO coated p-Si substrates are single crystalline and grown along the [001] direction. The p-n diode showed an excellent stability over the temperature range of 20-150 °C due to highly doped p -type Si substrate. The turn-on and breakdown voltage of the device slightly decreased with an increase of temperature whereas the saturation current of the device increased from 0.42 to 0.67 μA. The device behavior at different temperatures in forward as well as reverse biased conditions are studied and reported.

AB - This work explores the temperature dependent heterojunction behavior of n -type zinc oxide (ZnO) nanorods/ ZnOp-Si diodes. The as-grown ZnO nanorod structures on ZnO coated p-Si substrates are single crystalline and grown along the [001] direction. The p-n diode showed an excellent stability over the temperature range of 20-150 °C due to highly doped p -type Si substrate. The turn-on and breakdown voltage of the device slightly decreased with an increase of temperature whereas the saturation current of the device increased from 0.42 to 0.67 μA. The device behavior at different temperatures in forward as well as reverse biased conditions are studied and reported.

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U2 - 10.1063/1.2839579

DO - 10.1063/1.2839579

M3 - Article

AN - SCOPUS:38849184302

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VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 043127

ER -

Behavior of n-ZnO nanorods/p-Si heterojunction devices at higher temperatures

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