Band structure engineering of ZnO1-xSex alloys

Marie A. Mayer, Derrick T. Speaks, Kin Man Yu, Samuel S. Mao, Eugene E. Haller, Wladek Walukiewicz

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations


ZnO1-xSex films have been prepared through pulsed laser deposition as a step toward stable films with a band gap appropriate for water splitting. The films show a clear red shift in absorption with increasing Se content and a shift in the flat band voltage toward spontaneity. Due to the films' electron affinities, there exists a natural tunnel junction between these n- ZnO1-xSex films when grown on the p-side of a Si diode. The overall performance, emphasized by flat band potential measurements, can be improved by growing films on Si p-n diodes.

Original languageBritish English
Title of host publicationSolar Hydrogen and Nanotechnology V
StatePublished - 2010
EventSolar Hydrogen and Nanotechnology V - San Diego, CA, United States
Duration: 3 Aug 20105 Aug 2010

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


ConferenceSolar Hydrogen and Nanotechnology V
Country/TerritoryUnited States
CitySan Diego, CA


  • Band gap engineering
  • Oxide films
  • Photoelectrochemistry


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