Band structure engineering of ZnO1-xSex alloys

Marie A. Mayer; Derrick T. Speaks; Kin Man Yu; Samuel S. Mao; Eugene E. Haller; Wladek Walukiewicz

doi:10.1117/12.859482

Band structure engineering of ZnO_1-xSe_x alloys

Marie A. Mayer, Derrick T. Speaks, Kin Man Yu, Samuel S. Mao, Eugene E. Haller, Wladek Walukiewicz

Mechanical & Nuclear Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

ZnO_1-xSe_x films have been prepared through pulsed laser deposition as a step toward stable films with a band gap appropriate for water splitting. The films show a clear red shift in absorption with increasing Se content and a shift in the flat band voltage toward spontaneity. Due to the films' electron affinities, there exists a natural tunnel junction between these n- ZnO_1-xSe_x films when grown on the p-side of a Si diode. The overall performance, emphasized by flat band potential measurements, can be improved by growing films on Si p-n diodes.

Original language	British English
Title of host publication	Solar Hydrogen and Nanotechnology V
DOIs	https://doi.org/10.1117/12.859482
State	Published - 2010
Event	Solar Hydrogen and Nanotechnology V - San Diego, CA, United States Duration: 3 Aug 2010 → 5 Aug 2010

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7770
ISSN (Print)	0277-786X

Conference

Conference	Solar Hydrogen and Nanotechnology V
Country/Territory	United States
City	San Diego, CA
Period	3/08/10 → 5/08/10

Keywords

Band gap engineering
Oxide films
Photoelectrochemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1117/12.859482

Cite this

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title = "Band structure engineering of ZnO1-xSex alloys",

abstract = "ZnO1-xSex films have been prepared through pulsed laser deposition as a step toward stable films with a band gap appropriate for water splitting. The films show a clear red shift in absorption with increasing Se content and a shift in the flat band voltage toward spontaneity. Due to the films' electron affinities, there exists a natural tunnel junction between these n- ZnO1-xSex films when grown on the p-side of a Si diode. The overall performance, emphasized by flat band potential measurements, can be improved by growing films on Si p-n diodes.",

keywords = "Band gap engineering, Oxide films, Photoelectrochemistry",

author = "Mayer, {Marie A.} and Speaks, {Derrick T.} and {Man Yu}, Kin and Mao, {Samuel S.} and Haller, {Eugene E.} and Wladek Walukiewicz",

year = "2010",

doi = "10.1117/12.859482",

language = "British English",

isbn = "9780819482662",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

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note = "Solar Hydrogen and Nanotechnology V ; Conference date: 03-08-2010 Through 05-08-2010",

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T1 - Band structure engineering of ZnO1-xSex alloys

AU - Mayer, Marie A.

AU - Speaks, Derrick T.

AU - Man Yu, Kin

AU - Mao, Samuel S.

AU - Haller, Eugene E.

AU - Walukiewicz, Wladek

PY - 2010

Y1 - 2010

N2 - ZnO1-xSex films have been prepared through pulsed laser deposition as a step toward stable films with a band gap appropriate for water splitting. The films show a clear red shift in absorption with increasing Se content and a shift in the flat band voltage toward spontaneity. Due to the films' electron affinities, there exists a natural tunnel junction between these n- ZnO1-xSex films when grown on the p-side of a Si diode. The overall performance, emphasized by flat band potential measurements, can be improved by growing films on Si p-n diodes.

AB - ZnO1-xSex films have been prepared through pulsed laser deposition as a step toward stable films with a band gap appropriate for water splitting. The films show a clear red shift in absorption with increasing Se content and a shift in the flat band voltage toward spontaneity. Due to the films' electron affinities, there exists a natural tunnel junction between these n- ZnO1-xSex films when grown on the p-side of a Si diode. The overall performance, emphasized by flat band potential measurements, can be improved by growing films on Si p-n diodes.

KW - Band gap engineering

KW - Oxide films

KW - Photoelectrochemistry

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DO - 10.1117/12.859482

M3 - Conference contribution

AN - SCOPUS:77958146002

SN - 9780819482662

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Solar Hydrogen and Nanotechnology V

T2 - Solar Hydrogen and Nanotechnology V

Y2 - 3 August 2010 through 5 August 2010

ER -