Band structure engineering of ZnO1-x Sex alloys

Marie A. Mayer; Derrick T. Speaks; Kin Man Yu; Samuel S. Mao; Eugene E. Haller; Wladek Walukiewicz

doi:10.1063/1.3464323

Band structure engineering of ZnO_1-x Se_x alloys

Marie A. Mayer, Derrick T. Speaks, Kin Man Yu, Samuel S. Mao, Eugene E. Haller, Wladek Walukiewicz

Mechanical & Nuclear Engineering

Research output: Contribution to journal › Article › peer-review

55 Scopus citations

Abstract

ZnO_1-x Se_x alloys with Se substitutional composition x<0.12 were synthesized using pulsed laser deposition. Incorporation of small concentrations of Se results in a greater than 1 eV red shift in the ZnO optical absorption edge which is quantitatively explained in the framework of the band anticrossing model. The Se defect level is found to be located at 0.9 eV above the ZnO valence band and the band anticrossing coupling constant is determined to be 1.2 eV. These parameters allow prediction of the composition dependence of the band gap as well as the conduction and the valence band offsets in the full composition range of ZnO_1-x Se_x alloys.

Original language	British English
Article number	022104
Journal	Applied Physics Letters
Volume	97
Issue number	2
DOIs	https://doi.org/10.1063/1.3464323
State	Published - 12 Jul 2010

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title = "Band structure engineering of ZnO1-x Sex alloys",

abstract = "ZnO1-x Sex alloys with Se substitutional composition x<0.12 were synthesized using pulsed laser deposition. Incorporation of small concentrations of Se results in a greater than 1 eV red shift in the ZnO optical absorption edge which is quantitatively explained in the framework of the band anticrossing model. The Se defect level is found to be located at 0.9 eV above the ZnO valence band and the band anticrossing coupling constant is determined to be 1.2 eV. These parameters allow prediction of the composition dependence of the band gap as well as the conduction and the valence band offsets in the full composition range of ZnO1-x Sex alloys.",

author = "Mayer, {Marie A.} and Speaks, {Derrick T.} and Yu, {Kin Man} and Mao, {Samuel S.} and Haller, {Eugene E.} and Wladek Walukiewicz",

note = "Funding Information: We would like to thank Julian Guzman for TEM images, Alejandro Levander for assistance with XRD data and Robert Broesler for helpful discussion. This work was supported by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. M.A.M. acknowledges fellowship support from NDSEG. ",

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doi = "10.1063/1.3464323",

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volume = "97",

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AU - Mayer, Marie A.

AU - Speaks, Derrick T.

AU - Yu, Kin Man

AU - Mao, Samuel S.

AU - Haller, Eugene E.

AU - Walukiewicz, Wladek

N1 - Funding Information: We would like to thank Julian Guzman for TEM images, Alejandro Levander for assistance with XRD data and Robert Broesler for helpful discussion. This work was supported by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. M.A.M. acknowledges fellowship support from NDSEG.

PY - 2010/7/12

Y1 - 2010/7/12

N2 - ZnO1-x Sex alloys with Se substitutional composition x<0.12 were synthesized using pulsed laser deposition. Incorporation of small concentrations of Se results in a greater than 1 eV red shift in the ZnO optical absorption edge which is quantitatively explained in the framework of the band anticrossing model. The Se defect level is found to be located at 0.9 eV above the ZnO valence band and the band anticrossing coupling constant is determined to be 1.2 eV. These parameters allow prediction of the composition dependence of the band gap as well as the conduction and the valence band offsets in the full composition range of ZnO1-x Sex alloys.

AB - ZnO1-x Sex alloys with Se substitutional composition x<0.12 were synthesized using pulsed laser deposition. Incorporation of small concentrations of Se results in a greater than 1 eV red shift in the ZnO optical absorption edge which is quantitatively explained in the framework of the band anticrossing model. The Se defect level is found to be located at 0.9 eV above the ZnO valence band and the band anticrossing coupling constant is determined to be 1.2 eV. These parameters allow prediction of the composition dependence of the band gap as well as the conduction and the valence band offsets in the full composition range of ZnO1-x Sex alloys.

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Band structure engineering of ZnO_1-x Se_x alloys

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