@inproceedings{1b6c5a8669c44b16ab84319da2a9229f,
title = "Band gap variation of CdInSe and CdZnS fabricated by high throughput combinatorial growth technique",
abstract = "High energy radiation detector operating at room temperature requires the semiconductors having band-gap energies in the range of 1.35 ∼ 2.5 eV, high Z and high carrier mobility-lifetime (μτ) product. We report here the screening of the band-gap energies of compound semiconductor CdIn 2Se 4 and ZnCdS doped with Sn and In, prepared by high throughput combinatorial growth technique. It is found that the band-gap energies decrease as [Cd] decreases in Cd 1-xIn 2+2xSe 4+2x, and as In or Sn elements are incorporated in Zn xCd 1-xS. For both libraries, the μτ can reach a value on the order of 10 -4cm 2/V. These results have demonstrated the strong capability of the combinatorial growth technique in rapid material discovery for room temperature radiation detector applications.",
keywords = "combinatorial technique, mobility and lifetime, semiconductor band-gap",
author = "Ma, \{Z. X.\} and Hao, \{H. Y.\} and P. Xiao and Oehlerking, \{L. J.\} and Liu, \{D. F.\} and Zhang, \{X. J.\} and Yu, \{K. M.\} and W. Walukiewicz and Mao, \{S. S.\} and Yu, \{P. Y.\} and Lei Liu and Yu, \{Peter Y.\}",
year = "2011",
doi = "10.1063/1.3666742",
language = "British English",
isbn = "9780735410022",
series = "AIP Conference Proceedings",
pages = "1059--1060",
booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",
note = "30th International Conference on the Physics of Semiconductors, ICPS-30 ; Conference date: 25-07-2010 Through 30-07-2010",
}