@inproceedings{f0bbfaaebd3940e8819700ed95107467,
title = "Band anticrossing and luminescence emission in dilute InAs1-x-yNxSby quaternary alloys",
abstract = "In this paper, we calculate the luminescence of the dilute quaternary InAs1-x-yNxSby semiconductor using a microscopic approach. The theory starts with the band anticrossing model applied to both conduction and the valence band to generate input for analytical approximations that lead to luminescence spectra, including relevant many body effects. Direct application of the equations leads to good agreement with recently measured experimental data.",
keywords = "Band anticrossing models, InAsNSb dilute semiconductor, Luminescence, Many-body effects",
author = "Oriaku, {Chijioke I.} and Pereira, {Mauro F.}",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 17th International Conference on Transparent Optical Networks, ICTON 2015 ; Conference date: 05-07-2015 Through 09-07-2015",
year = "2015",
month = aug,
day = "12",
doi = "10.1109/ICTON.2015.7193677",
language = "British English",
series = "International Conference on Transparent Optical Networks",
publisher = "IEEE Computer Society",
editor = "Marek Jaworski and Marian Marciniak",
booktitle = "ICTON 2015 - 17th International Conference on Transparent Optical Networks",
address = "United States",
}