Automated numerical characterization of dilute semiconductors per comparison with luminescence

X. Yang, C. I. Oriaku, J. P. Zubelli, M. F. Pereira

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

This paper combines analytical approximations for the optical absorption and luminescence of semiconductors with trust region-reflective methods, delivering a robust numerical characterization method to be used in the study of new bulk semiconductors per direct comparison with experimental spectra. It further extends recent applications of the theory to the case of dilute nitride semiconductors and confirms results for the s-shape of the luminescence peak as a function of temperature.

Original languageBritish English
Article number93
JournalOptical and Quantum Electronics
Volume49
Issue number3
DOIs
StatePublished - 1 Mar 2017

Keywords

  • Dilute nuitrides
  • Luminescence
  • Many body effects
  • Mid infrared
  • Semiconductors

Fingerprint

Dive into the research topics of 'Automated numerical characterization of dilute semiconductors per comparison with luminescence'. Together they form a unique fingerprint.

Cite this