Atomic layer deposition of transition metal films and nanostructures for electronic and catalytic applications

James W. Maina, Andrea Merenda, Matthieu Weber, Jennifer M. Pringle, Mikhael Bechelany, Lachlan Hyde, Ludovic F. Dumée

Research output: Contribution to journalReview articlepeer-review

10 Scopus citations

Abstract

Atomic layer deposition (ALD) has emerged as the technique of choice in the microelectronics industry, owing to its self-limiting nature, that allows conformal film deposition in highly confined spaces. However, while the ALD of metal oxide has developed dramatically over the past decade, ALD of pure metal, particularly the transition metals has been developing at a very slow pace. This article reviews the latest development in the ALD of pure transition metals and alloys, for electronic and catalytic applications. In particular, the article analyzes how different factors, such as the substrate properties, deposition conditions, precursor and co-reactant properties, influence the deposition of the metal films and nanostructures, as well as the emerging applications of the ALD derived transition metal nanostructures. The challenges facing the field are highlighted, and suggestions are made for future research directions.

Original languageBritish English
Pages (from-to)468-489
Number of pages22
JournalCritical Reviews in Solid State and Materials Sciences
Volume46
Issue number5
DOIs
StatePublished - 2021

Keywords

  • Atomic layer deposition (ALD)
  • catalytic applications
  • electronic applications
  • nanostructures
  • transition metals

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