Assembling highly efficient X-ray and UV-visible light detectors using a VS2-MoS2 and VS2-WS2 hybrid composite-embedded perovskite layer

Dhanasekaran Vikraman, Hailiang Liu, Syed Hassan Abbas Jaffery, Sajjad Hussain, K. Karuppasamy, Duhee Lee, Jungwon Kang, Jongwan Jung, Hyun Seok Kim

    Research output: Contribution to journalArticlepeer-review

    Abstract

    In the past few years, perovskite-based research has made great advancements through its active role in the electronics industry. However, the defects in perovskite films caused by uncontrollable crystallization and the brittle ionic compounds cause deterioration in the efficiency and robustness of the resulting devices. In this study, an attempt was made to produce the Cs0.1MA0.9PbI3 perovskite and its transition metal sulfide hybrids (VS2-XS2, X = Mo or W) with an altered configuration to realize enhanced device characteristics of perovskite based ultraviolet (UV)-visible and X-ray photodetectors. A maximum photoresponsivity of 73.1 A W−1, detectivity of 4.55 × 1012 Jones, and normalized photocurrent-to-dark current ratio (NPDR) of 1.81 × 1010 W−1 at 1179 μW cm−2 under UV lighting were exhibited by the photodetector comprising the VW2 VS2-WS2 doped perovskite layer. Furthermore, an X-ray detector with a Cs0.1MA0.9PbI3-VW2 layer attained a sensitivity and CCD-DCD of 3.66 mA Gy−1 cm−2 and 12.22 μA cm−2, respectively. This work provides a new roadmap to fabricate the metal sulfide hybrid-tuned perovskite structures for achieving instant charge extraction and desirable electron/hole transport behaviors to fabricate highly sensitive semiconductor devices.

    Original languageBritish English
    Pages (from-to)14769-14785
    Number of pages17
    JournalJournal of Materials Chemistry A
    Volume12
    Issue number24
    DOIs
    StatePublished - 13 May 2024

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