Analytical study of thermal annealing behaviour of erbium emission in Er2O3-sol-gel silica films

S. Abedrabbo; B. Lahlouh; A. T. Fiory

doi:10.1088/0022-3727/44/31/315401

Analytical study of thermal annealing behaviour of erbium emission in Er₂O₃-sol-gel silica films

S. Abedrabbo
, B. Lahlouh
, A. T. Fiory

Physics

The University of Jordan
New Jersey Institute of Technology

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

Room-temperature 1535 nm band photoluminescence in ∼126 nm silica films (6 at% doping), produced by spin coating an Er₂O₃ and tetraethylorthosilicate sol-gel formulation on silicon substrates, was studied as a function of vacuum furnace annealing (500-1050 °C). Emission is strongly enhanced for annealing near 850 °C, which is shown by modelling the temperature dependence as arising from thermally activated removal of hydroxyl ions. Suitability of such a process for silicon-based applications is discussed.

Original language	British English
Article number	315401
Journal	Journal of Physics D: Applied Physics
Volume	44
Issue number	31
DOIs	https://doi.org/10.1088/0022-3727/44/31/315401
State	Published - 10 Aug 2011

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title = "Analytical study of thermal annealing behaviour of erbium emission in Er2O3-sol-gel silica films",

abstract = "Room-temperature 1535 nm band photoluminescence in ∼126 nm silica films (6 at\% doping), produced by spin coating an Er2O3 and tetraethylorthosilicate sol-gel formulation on silicon substrates, was studied as a function of vacuum furnace annealing (500-1050 °C). Emission is strongly enhanced for annealing near 850 °C, which is shown by modelling the temperature dependence as arising from thermally activated removal of hydroxyl ions. Suitability of such a process for silicon-based applications is discussed.",

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AB - Room-temperature 1535 nm band photoluminescence in ∼126 nm silica films (6 at% doping), produced by spin coating an Er2O3 and tetraethylorthosilicate sol-gel formulation on silicon substrates, was studied as a function of vacuum furnace annealing (500-1050 °C). Emission is strongly enhanced for annealing near 850 °C, which is shown by modelling the temperature dependence as arising from thermally activated removal of hydroxyl ions. Suitability of such a process for silicon-based applications is discussed.

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DO - 10.1088/0022-3727/44/31/315401

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Analytical study of thermal annealing behaviour of erbium emission in Er₂O₃-sol-gel silica films

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