Analytical expressions for numerical characterization of semiconductors per comparison with luminescence

Mauro F. Pereira

doi:10.3390/ma11010002

Analytical expressions for numerical characterization of semiconductors per comparison with luminescence

Mauro F. Pereira

Physics

Research output: Contribution to journal › Review article › peer-review

28 Scopus citations

Abstract

Luminescence is one of the most important characterisation tools of semiconductor materials and devices. Recently, a very efficient analytical set of equations has been applied to explain optical properties of dilute semiconductor materials, with an emphasis on the evolution of peak luminescence gain with temperature and its relation to sample quality. This paper summarizes important steps of the derivation of these expressions that have not been presented before and delivers a theoretical framework that can used to apply exactly solvable Hamiltonians for realistic studies of luminescence in various systems.

Original language	British English
Article number	2
Journal	Materials
Volume	11
Issue number	1
DOIs	https://doi.org/10.3390/ma11010002
State	Published - 21 Dec 2017

Keywords

Absorption
Dilute semiconductors
Luminescence
Many body effects
TERA-MIR radiation

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abstract = "Luminescence is one of the most important characterisation tools of semiconductor materials and devices. Recently, a very efficient analytical set of equations has been applied to explain optical properties of dilute semiconductor materials, with an emphasis on the evolution of peak luminescence gain with temperature and its relation to sample quality. This paper summarizes important steps of the derivation of these expressions that have not been presented before and delivers a theoretical framework that can used to apply exactly solvable Hamiltonians for realistic studies of luminescence in various systems.",

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note = "Funding Information: Acknowledgments: Research supported by COST ACTION MP1401. Publisher Copyright: {\textcopyright} 2017 by the authors.",

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AB - Luminescence is one of the most important characterisation tools of semiconductor materials and devices. Recently, a very efficient analytical set of equations has been applied to explain optical properties of dilute semiconductor materials, with an emphasis on the evolution of peak luminescence gain with temperature and its relation to sample quality. This paper summarizes important steps of the derivation of these expressions that have not been presented before and delivers a theoretical framework that can used to apply exactly solvable Hamiltonians for realistic studies of luminescence in various systems.

KW - Absorption

KW - Dilute semiconductors

KW - Luminescence

KW - Many body effects

KW - TERA-MIR radiation

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Analytical expressions for numerical characterization of semiconductors per comparison with luminescence

Abstract

Keywords

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