Analysis of UV-Laser induced oxidation of implanted silicon by optical reflectivity measurements

F. Foulon; A. Slaoui; E. Fogarassy; C. Fuchs; P. Siffert

doi:10.1007/BF00615931

Analysis of UV-Laser induced oxidation of implanted silicon by optical reflectivity measurements

F. Foulon
, A. Slaoui
, E. Fogarassy
, C. Fuchs
, P. Siffert

Centre de Recherches Nucleaires (IN2P3)

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The oxidation of ion implanted silicon induced by a repetitive excimer laser working in liquid phase regime has been monitored by a simple in situ technique. It consists to follow the optical reflectivity at the wavelength 633 nm of the silicon samples under irradiation. The influence of implantation and laser irradiation conditions on the oxidation process has been investigated by this technique. The results obtained have been compared using infrared absorption data. The role of the Si/SiO₂ interface roughness on the oxide film quality has been studied.

Original language	British English
Pages (from-to)	255-258
Number of pages	4
Journal	Applied Physics A Solids and Surfaces
Volume	47
Issue number	3
DOIs	https://doi.org/10.1007/BF00615931
State	Published - Nov 1988

Keywords

61.80
78.70
81.60

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abstract = "The oxidation of ion implanted silicon induced by a repetitive excimer laser working in liquid phase regime has been monitored by a simple in situ technique. It consists to follow the optical reflectivity at the wavelength 633 nm of the silicon samples under irradiation. The influence of implantation and laser irradiation conditions on the oxidation process has been investigated by this technique. The results obtained have been compared using infrared absorption data. The role of the Si/SiO2 interface roughness on the oxide film quality has been studied.",

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T1 - Analysis of UV-Laser induced oxidation of implanted silicon by optical reflectivity measurements

AU - Foulon, F.

AU - Slaoui, A.

AU - Fogarassy, E.

AU - Fuchs, C.

AU - Siffert, P.

PY - 1988/11

Y1 - 1988/11

N2 - The oxidation of ion implanted silicon induced by a repetitive excimer laser working in liquid phase regime has been monitored by a simple in situ technique. It consists to follow the optical reflectivity at the wavelength 633 nm of the silicon samples under irradiation. The influence of implantation and laser irradiation conditions on the oxidation process has been investigated by this technique. The results obtained have been compared using infrared absorption data. The role of the Si/SiO2 interface roughness on the oxide film quality has been studied.

AB - The oxidation of ion implanted silicon induced by a repetitive excimer laser working in liquid phase regime has been monitored by a simple in situ technique. It consists to follow the optical reflectivity at the wavelength 633 nm of the silicon samples under irradiation. The influence of implantation and laser irradiation conditions on the oxidation process has been investigated by this technique. The results obtained have been compared using infrared absorption data. The role of the Si/SiO2 interface roughness on the oxide film quality has been studied.

KW - 61.80

KW - 78.70

KW - 81.60

UR - https://www.scopus.com/pages/publications/0024108364

U2 - 10.1007/BF00615931

DO - 10.1007/BF00615931

M3 - Article

AN - SCOPUS:0024108364

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JO - Applied Physics A Solids and Surfaces

JF - Applied Physics A Solids and Surfaces

IS - 3

ER -

Analysis of UV-Laser induced oxidation of implanted silicon by optical reflectivity measurements

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Keywords

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