Analysis of the interface barriers between nano metal particles and semiconductors substrates

Moh'D Rezeq, Khouloud Eledlebi, Mohammed Ismail, Isra Lababidi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Reducing the size of metal-semiconductor (M-S) contacts to sub 20 nm results in a deviation of the interface barrier characteristics from the those predicted by the conventional theory of (M-S) contacts. This is attributed to the enhancement of the electric field at the interface due to the charge confinement in the nano metal particle. We introduce analytical analysis and finite element simulations for calculating the interface parameters. The significant electric field enhancement and the reduction of the barrier thickness account for the reversed rectification behavior compared to the conventional I-V data of M-S junctions.

Original languageBritish English
Title of host publication2013 IEEE 56th International Midwest Symposium on Circuits and Systems, MWSCAS 2013
Pages736-738
Number of pages3
DOIs
StatePublished - 2013
Event2013 IEEE 56th International Midwest Symposium on Circuits and Systems, MWSCAS 2013 - Columbus, OH, United States
Duration: 4 Aug 20137 Aug 2013

Publication series

NameMidwest Symposium on Circuits and Systems
ISSN (Print)1548-3746

Conference

Conference2013 IEEE 56th International Midwest Symposium on Circuits and Systems, MWSCAS 2013
Country/TerritoryUnited States
CityColumbus, OH
Period4/08/137/08/13

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