TY - JOUR
T1 - An Improved di/dt-RCD Detection for Short-Circuit Protection of SiC mosfet
AU - Xue, Ju
AU - Xin, Zhen
AU - Wang, Huai
AU - Loh, Poh Chiang
AU - Blaabjerg, Frede
N1 - Funding Information:
Manuscript received April 6, 2020; revised May 16, 2020; accepted May 26, 2020. Date of publication June 4, 2020; date of current version September 4, 2020. This work was supported in part by the Youth Program of National Natural Science Foundation of China under Grant 51907048, in part by the Green Channel Program of Natural Science Foundation of Hebei Province under Grant E2019202345, and in part by the Youth Top Talent Program of Department of Education of Hebei Province under Grant BJ2019043. (Corresponding author: Zhen Xin.) Ju Xue and Zhen Xin are with the State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300130, China (e-mail: [email protected]; [email protected]).
Publisher Copyright:
© 1986-2012 IEEE.
PY - 2021/1
Y1 - 2021/1
N2 - Silicon carbide metal-oxide-semiconductor field-effect transistor has a smaller short-circuit tolerance, and hence, requires faster and more accurate short-circuit protection. One prospective method is to combine fast di/dt detection with an integration circuit. The former is for detecting the extremely fast increase of short-circuit current, while the latter is for generating a scaled copy of the short-circuit current for comparison with a threshold. The integration is almost always performed with a resistive-capacitive (RC) low-pass filter due to its simplicity. However, it does not produce consistent results under different load and fault conditions, which can, in turn, cause the detection to fail. An alternative di/dt-RCD (RC + diode) protective circuit has therefore been proposed to offer more accurate and consistent results, irrespective of the fault types. Design equations for the circuit have been derived for implementing an experimental setup, from which results have proven the effectiveness of the proposed di/dt-RCD protection.
AB - Silicon carbide metal-oxide-semiconductor field-effect transistor has a smaller short-circuit tolerance, and hence, requires faster and more accurate short-circuit protection. One prospective method is to combine fast di/dt detection with an integration circuit. The former is for detecting the extremely fast increase of short-circuit current, while the latter is for generating a scaled copy of the short-circuit current for comparison with a threshold. The integration is almost always performed with a resistive-capacitive (RC) low-pass filter due to its simplicity. However, it does not produce consistent results under different load and fault conditions, which can, in turn, cause the detection to fail. An alternative di/dt-RCD (RC + diode) protective circuit has therefore been proposed to offer more accurate and consistent results, irrespective of the fault types. Design equations for the circuit have been derived for implementing an experimental setup, from which results have proven the effectiveness of the proposed di/dt-RCD protection.
KW - Gate-driver
KW - Kelvin-source
KW - short-circuit protection
KW - silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET)
UR - http://www.scopus.com/inward/record.url?scp=85091213336&partnerID=8YFLogxK
U2 - 10.1109/TPEL.2020.3000246
DO - 10.1109/TPEL.2020.3000246
M3 - Article
AN - SCOPUS:85091213336
SN - 0885-8993
VL - 36
SP - 12
EP - 17
JO - IEEE Transactions on Power Electronics
JF - IEEE Transactions on Power Electronics
IS - 1
M1 - 9109734
ER -