An Armstrong GaN-Based Oscillator for Wireless Power Transfer Applications

Amer Bassal, Azizulrahman Shafiqurrahman, Anwar Jarndal

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    2 Scopus citations

    Abstract

    This paper reports the design and implementation of an Armstrong power oscillator for wireless power transfer (WPT) using GaN HEMT (high electron mobility transistor) at 4.6 GHz and GaN FET at 40 kHz. In the first design, a low power depletion-type device is used, simulated and integrated with a magnetically coupled resonant (MRC) WPT system using PCBs. The second design is based on a higher power enhancement-type transistor, where it is simulated and compared with the first design. High quality AC output waveforms with low distortion are obtained, which leads to low electromagnetic interference (EMI) levels that are required for sensitive applications such as biomedical technologies.

    Original languageBritish English
    Title of host publication2019 International Conference on Electrical and Computing Technologies and Applications, ICECTA 2019
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Electronic)9781728155326
    DOIs
    StatePublished - Nov 2019
    Event2019 International Conference on Electrical and Computing Technologies and Applications, ICECTA 2019 - Ras Al Khaimah, United Arab Emirates
    Duration: 19 Nov 201921 Nov 2019

    Publication series

    Name2019 International Conference on Electrical and Computing Technologies and Applications, ICECTA 2019

    Conference

    Conference2019 International Conference on Electrical and Computing Technologies and Applications, ICECTA 2019
    Country/TerritoryUnited Arab Emirates
    CityRas Al Khaimah
    Period19/11/1921/11/19

    Keywords

    • Armstrong oscillator
    • GaNHEMT
    • wireless power transfer

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