@inproceedings{19659e0c6fd14d1c8eaba4531559bfbc,
title = "An analytical turn-on power loss model for 650-V GaN eHEMTs",
abstract = "This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time-domain solutions to the drain-source voltage and drain current are obtained. Finally, double-pulse tests are conducted to verify the proposed power loss model. This analytical model enables an accurate and fast switching behavior characterization and power loss prediction.",
keywords = "GaN eHEMTs, Power loss model, Turn-on",
author = "Yanfeng Shen and Huai Wang and Zhan Shen and Frede Blaabjerg and Zian Qin",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 33rd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2018 ; Conference date: 04-03-2018 Through 08-03-2018",
year = "2018",
month = apr,
day = "18",
doi = "10.1109/APEC.2018.8341123",
language = "British English",
series = "Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "913--918",
booktitle = "APEC 2018 - 33rd Annual IEEE Applied Power Electronics Conference and Exposition",
address = "United States",
}