An analytical turn-on power loss model for 650-V GaN eHEMTs

Yanfeng Shen, Huai Wang, Zhan Shen, Frede Blaabjerg, Zian Qin

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    8 Scopus citations

    Abstract

    This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time-domain solutions to the drain-source voltage and drain current are obtained. Finally, double-pulse tests are conducted to verify the proposed power loss model. This analytical model enables an accurate and fast switching behavior characterization and power loss prediction.

    Original languageBritish English
    Title of host publicationAPEC 2018 - 33rd Annual IEEE Applied Power Electronics Conference and Exposition
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages913-918
    Number of pages6
    ISBN (Electronic)9781538611807
    DOIs
    StatePublished - 18 Apr 2018
    Event33rd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2018 - San Antonio, United States
    Duration: 4 Mar 20188 Mar 2018

    Publication series

    NameConference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
    Volume2018-March

    Conference

    Conference33rd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2018
    Country/TerritoryUnited States
    CitySan Antonio
    Period4/03/188/03/18

    Keywords

    • GaN eHEMTs
    • Power loss model
    • Turn-on

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