Aluminum doped zinc oxide-silicon heterojunction solar cell by low temperature atomic layer deposition

Nawal Aqab; Hiba Riaz; Ammar Nayfeh

doi:10.1109/PVSC.2016.7749667

Aluminum doped zinc oxide-silicon heterojunction solar cell by low temperature atomic layer deposition

Nawal Aqab
, Hiba Riaz
, Ammar Nayfeh

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

12 Scopus citations

Abstract

Here we demonstrated an Aluminum doped Zinc Oxide (AZO)-Si heterojunction solar cell. The AZO film is deposited using low temperature Atomic Layer Deposition. The thickness of the layer is measured to be around 87nm and hall measurements confirm a very high conductivity. Diode like behavior is demonstrated, confirming the presence of a p-n junction. In addition, the reflectance, EQE and IQE of the cell are studied. The minimum reflectance is 21.12% at 630nm, maximum EQE is 20.83% at 530nm and maximum IQE is 28.42% at 490nm.

Original language	British English
Title of host publication	2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	598-601
Number of pages	4
ISBN (Electronic)	9781509027248
DOIs	https://doi.org/10.1109/PVSC.2016.7749667
State	Published - 18 Nov 2016
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: 5 Jun 2016 → 10 Jun 2016

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
Volume	2016-November
ISSN (Print)	0160-8371

Conference

Conference	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	5/06/16 → 10/06/16

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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10.1109/PVSC.2016.7749667

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Aqab, N., Riaz, H., & Nayfeh, A. (2016). Aluminum doped zinc oxide-silicon heterojunction solar cell by low temperature atomic layer deposition. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (pp. 598-601). Article 7749667 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7749667

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abstract = "Here we demonstrated an Aluminum doped Zinc Oxide (AZO)-Si heterojunction solar cell. The AZO film is deposited using low temperature Atomic Layer Deposition. The thickness of the layer is measured to be around 87nm and hall measurements confirm a very high conductivity. Diode like behavior is demonstrated, confirming the presence of a p-n junction. In addition, the reflectance, EQE and IQE of the cell are studied. The minimum reflectance is 21.12\% at 630nm, maximum EQE is 20.83\% at 530nm and maximum IQE is 28.42\% at 490nm.",

author = "Nawal Aqab and Hiba Riaz and Ammar Nayfeh",

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Aqab, N, Riaz, H & Nayfeh, A 2016, Aluminum doped zinc oxide-silicon heterojunction solar cell by low temperature atomic layer deposition. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016., 7749667, Conference Record of the IEEE Photovoltaic Specialists Conference, vol. 2016-November, Institute of Electrical and Electronics Engineers Inc., pp. 598-601, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 5/06/16. https://doi.org/10.1109/PVSC.2016.7749667

Aluminum doped zinc oxide-silicon heterojunction solar cell by low temperature atomic layer deposition. / Aqab, Nawal; Riaz, Hiba; Nayfeh, Ammar.
2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 598-601 7749667 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Nayfeh, Ammar

PY - 2016/11/18

Y1 - 2016/11/18

N2 - Here we demonstrated an Aluminum doped Zinc Oxide (AZO)-Si heterojunction solar cell. The AZO film is deposited using low temperature Atomic Layer Deposition. The thickness of the layer is measured to be around 87nm and hall measurements confirm a very high conductivity. Diode like behavior is demonstrated, confirming the presence of a p-n junction. In addition, the reflectance, EQE and IQE of the cell are studied. The minimum reflectance is 21.12% at 630nm, maximum EQE is 20.83% at 530nm and maximum IQE is 28.42% at 490nm.

AB - Here we demonstrated an Aluminum doped Zinc Oxide (AZO)-Si heterojunction solar cell. The AZO film is deposited using low temperature Atomic Layer Deposition. The thickness of the layer is measured to be around 87nm and hall measurements confirm a very high conductivity. Diode like behavior is demonstrated, confirming the presence of a p-n junction. In addition, the reflectance, EQE and IQE of the cell are studied. The minimum reflectance is 21.12% at 630nm, maximum EQE is 20.83% at 530nm and maximum IQE is 28.42% at 490nm.

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M3 - Conference contribution

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ER -

Aqab N, Riaz H, Nayfeh A. Aluminum doped zinc oxide-silicon heterojunction solar cell by low temperature atomic layer deposition. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 598-601. 7749667. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2016.7749667

Aluminum doped zinc oxide-silicon heterojunction solar cell by low temperature atomic layer deposition

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