Aluminum doped zinc oxide-silicon heterojunction solar cell by low temperature atomic layer deposition

Nawal Aqab; Hiba Riaz; Ammar Nayfeh

doi:10.1109/PVSC.2017.8366068

Aluminum doped zinc oxide-silicon heterojunction solar cell by low temperature atomic layer deposition

Nawal Aqab
, Hiba Riaz
, Ammar Nayfeh

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Here we demonstrated an Aluminum doped Zinc Oxide (AZO)-Si heterojunction solar cell. The AZO film is deposited using low temperature Atomic Layer Deposition. The thickness of the layer is measured to be around 87nm and hall measurements confirm a very high conductivity. Diode like behavior is demonstrated, confirming the presence of a p-n junction. In addition, the reflectance, EQE and IQE of the cell are studied. The minimum reflectance is 21.12% at 630nm, maximum EQE is 20.83% at 530nm and maximum IQE is 28.42% at 490nm.

Original language	British English
Title of host publication	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	3020-3024
Number of pages	5
ISBN (Electronic)	9781509056057
DOIs	https://doi.org/10.1109/PVSC.2017.8366068
State	Published - 2017
Event	44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: 25 Jun 2017 → 30 Jun 2017

Publication series

Name	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Conference

Conference	44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Country/Territory	United States
City	Washington
Period	25/06/17 → 30/06/17

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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Aqab, N., Riaz, H., & Nayfeh, A. (2017). Aluminum doped zinc oxide-silicon heterojunction solar cell by low temperature atomic layer deposition. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 3020-3024). (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366068

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title = "Aluminum doped zinc oxide-silicon heterojunction solar cell by low temperature atomic layer deposition",

abstract = "Here we demonstrated an Aluminum doped Zinc Oxide (AZO)-Si heterojunction solar cell. The AZO film is deposited using low temperature Atomic Layer Deposition. The thickness of the layer is measured to be around 87nm and hall measurements confirm a very high conductivity. Diode like behavior is demonstrated, confirming the presence of a p-n junction. In addition, the reflectance, EQE and IQE of the cell are studied. The minimum reflectance is 21.12\% at 630nm, maximum EQE is 20.83\% at 530nm and maximum IQE is 28.42\% at 490nm.",

author = "Nawal Aqab and Hiba Riaz and Ammar Nayfeh",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",

year = "2017",

doi = "10.1109/PVSC.2017.8366068",

language = "British English",

series = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Aqab, N, Riaz, H & Nayfeh, A 2017, Aluminum doped zinc oxide-silicon heterojunction solar cell by low temperature atomic layer deposition. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017, Institute of Electrical and Electronics Engineers Inc., pp. 3020-3024, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, United States, 25/06/17. https://doi.org/10.1109/PVSC.2017.8366068

Aluminum doped zinc oxide-silicon heterojunction solar cell by low temperature atomic layer deposition. / Aqab, Nawal; Riaz, Hiba; Nayfeh, Ammar.
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 3020-3024 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Aluminum doped zinc oxide-silicon heterojunction solar cell by low temperature atomic layer deposition

AU - Aqab, Nawal

AU - Riaz, Hiba

AU - Nayfeh, Ammar

PY - 2017

Y1 - 2017

N2 - Here we demonstrated an Aluminum doped Zinc Oxide (AZO)-Si heterojunction solar cell. The AZO film is deposited using low temperature Atomic Layer Deposition. The thickness of the layer is measured to be around 87nm and hall measurements confirm a very high conductivity. Diode like behavior is demonstrated, confirming the presence of a p-n junction. In addition, the reflectance, EQE and IQE of the cell are studied. The minimum reflectance is 21.12% at 630nm, maximum EQE is 20.83% at 530nm and maximum IQE is 28.42% at 490nm.

AB - Here we demonstrated an Aluminum doped Zinc Oxide (AZO)-Si heterojunction solar cell. The AZO film is deposited using low temperature Atomic Layer Deposition. The thickness of the layer is measured to be around 87nm and hall measurements confirm a very high conductivity. Diode like behavior is demonstrated, confirming the presence of a p-n junction. In addition, the reflectance, EQE and IQE of the cell are studied. The minimum reflectance is 21.12% at 630nm, maximum EQE is 20.83% at 530nm and maximum IQE is 28.42% at 490nm.

UR - https://www.scopus.com/pages/publications/85048502081

U2 - 10.1109/PVSC.2017.8366068

DO - 10.1109/PVSC.2017.8366068

M3 - Conference contribution

AN - SCOPUS:85048502081

T3 - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

SP - 3020

EP - 3024

BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017

Y2 - 25 June 2017 through 30 June 2017

ER -

Aluminum doped zinc oxide-silicon heterojunction solar cell by low temperature atomic layer deposition

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