Aluminum doped zinc oxide-silicon heterojunction solar cell by low temperature atomic layer deposition

Nawal Aqab, Hiba Riaz, Ammar Nayfeh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Here we demonstrated an Aluminum doped Zinc Oxide (AZO)-Si heterojunction solar cell. The AZO film is deposited using low temperature Atomic Layer Deposition. The thickness of the layer is measured to be around 87nm and hall measurements confirm a very high conductivity. Diode like behavior is demonstrated, confirming the presence of a p-n junction. In addition, the reflectance, EQE and IQE of the cell are studied. The minimum reflectance is 21.12% at 630nm, maximum EQE is 20.83% at 530nm and maximum IQE is 28.42% at 490nm.

Original languageBritish English
Title of host publication2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3020-3024
Number of pages5
ISBN (Electronic)9781509056057
DOIs
StatePublished - 2017
Event44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States
Duration: 25 Jun 201730 Jun 2017

Publication series

Name2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Conference

Conference44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Country/TerritoryUnited States
CityWashington
Period25/06/1730/06/17

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