@inproceedings{5f39eb389766485ba0eadd13e42753ec,
title = "Aluminum doped zinc oxide-silicon heterojunction solar cell by low temperature atomic layer deposition",
abstract = "Here we demonstrated an Aluminum doped Zinc Oxide (AZO)-Si heterojunction solar cell. The AZO film is deposited using low temperature Atomic Layer Deposition. The thickness of the layer is measured to be around 87nm and hall measurements confirm a very high conductivity. Diode like behavior is demonstrated, confirming the presence of a p-n junction. In addition, the reflectance, EQE and IQE of the cell are studied. The minimum reflectance is 21.12% at 630nm, maximum EQE is 20.83% at 530nm and maximum IQE is 28.42% at 490nm.",
author = "Nawal Aqab and Hiba Riaz and Ammar Nayfeh",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",
year = "2017",
doi = "10.1109/PVSC.2017.8366068",
language = "British English",
series = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "3020--3024",
booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",
address = "United States",
}