@inproceedings{58fc5d4e3ae94448868133f5aa7a3448,
title = "Aluminum doped zinc oxide-silicon heterojunction solar cell by low temperature atomic layer deposition",
abstract = "Here we demonstrated an Aluminum doped Zinc Oxide (AZO)-Si heterojunction solar cell. The AZO film is deposited using low temperature Atomic Layer Deposition. The thickness of the layer is measured to be around 87nm and hall measurements confirm a very high conductivity. Diode like behavior is demonstrated, confirming the presence of a p-n junction. In addition, the reflectance, EQE and IQE of the cell are studied. The minimum reflectance is 21.12% at 630nm, maximum EQE is 20.83% at 530nm and maximum IQE is 28.42% at 490nm.",
author = "Nawal Aqab and Hiba Riaz and Ammar Nayfeh",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 ; Conference date: 05-06-2016 Through 10-06-2016",
year = "2016",
month = nov,
day = "18",
doi = "10.1109/PVSC.2016.7749667",
language = "British English",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "598--601",
booktitle = "2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016",
address = "United States",
}
