ALD al-doped ZnO thin film as semiconductor and piezoelectric material: Transistors and sensors

Ayman Rezk; Irfan Saadat

doi:10.1007/978-3-319-93100-5_5

ALD al-doped ZnO thin film as semiconductor and piezoelectric material: Transistors and sensors

Ayman Rezk
, Irfan Saadat

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

Abstract

Based on the results of Rizk and Saadat (The IoT Physical Layer, pp. 23-46, Springer, Berlin, 2018, [1], The IoT Physical Layer, pp. 47-68, Springer, Berlin, 2018, [2]), this chapter covers the use of Al-doped ZnO films as active channel material for TFT devices. It shows the need to have semiconducting behavior of the ZnO films and how this is modulated by the synthesis method, Al doping and synthesis temperature. Then, this chapter covers the process flow and goes over the unique challenges of fabricating on flexible substrate versus Si substrate and the associated mitigation techniques. These challenges include adhesion, film reliability, heat dissipation, and its low-temperature processing on flexible substrates. This is followed by the characterization of the TFT and its demonstration as best in its class, when it comes to this material system and associated fabrication constraints.

Original language	British English
Title of host publication	The IoT Physical Layer
Subtitle of host publication	Design and Implementation
Pages	69-72
Number of pages	4
ISBN (Electronic)	9783319931005
DOIs	https://doi.org/10.1007/978-3-319-93100-5_5
State	Published - 1 Jan 2018

Keywords

Aluminum-doped ZnO
Atomic layer deposition
Flexible substrate
High-k
Thin-film transistor
Transparent substrate
Zinc oxide

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10.1007/978-3-319-93100-5_5

Cite this

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abstract = "Based on the results of Rizk and Saadat (The IoT Physical Layer, pp. 23-46, Springer, Berlin, 2018, [1], The IoT Physical Layer, pp. 47-68, Springer, Berlin, 2018, [2]), this chapter covers the use of Al-doped ZnO films as active channel material for TFT devices. It shows the need to have semiconducting behavior of the ZnO films and how this is modulated by the synthesis method, Al doping and synthesis temperature. Then, this chapter covers the process flow and goes over the unique challenges of fabricating on flexible substrate versus Si substrate and the associated mitigation techniques. These challenges include adhesion, film reliability, heat dissipation, and its low-temperature processing on flexible substrates. This is followed by the characterization of the TFT and its demonstration as best in its class, when it comes to this material system and associated fabrication constraints.",

keywords = "Aluminum-doped ZnO, Atomic layer deposition, Flexible substrate, High-k, Thin-film transistor, Transparent substrate, Zinc oxide",

author = "Ayman Rezk and Irfan Saadat",

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AU - Rezk, Ayman

AU - Saadat, Irfan

N1 - Publisher Copyright: © Springer International Publishing AG, part of Springer Nature 2019.

PY - 2018/1/1

Y1 - 2018/1/1

N2 - Based on the results of Rizk and Saadat (The IoT Physical Layer, pp. 23-46, Springer, Berlin, 2018, [1], The IoT Physical Layer, pp. 47-68, Springer, Berlin, 2018, [2]), this chapter covers the use of Al-doped ZnO films as active channel material for TFT devices. It shows the need to have semiconducting behavior of the ZnO films and how this is modulated by the synthesis method, Al doping and synthesis temperature. Then, this chapter covers the process flow and goes over the unique challenges of fabricating on flexible substrate versus Si substrate and the associated mitigation techniques. These challenges include adhesion, film reliability, heat dissipation, and its low-temperature processing on flexible substrates. This is followed by the characterization of the TFT and its demonstration as best in its class, when it comes to this material system and associated fabrication constraints.

AB - Based on the results of Rizk and Saadat (The IoT Physical Layer, pp. 23-46, Springer, Berlin, 2018, [1], The IoT Physical Layer, pp. 47-68, Springer, Berlin, 2018, [2]), this chapter covers the use of Al-doped ZnO films as active channel material for TFT devices. It shows the need to have semiconducting behavior of the ZnO films and how this is modulated by the synthesis method, Al doping and synthesis temperature. Then, this chapter covers the process flow and goes over the unique challenges of fabricating on flexible substrate versus Si substrate and the associated mitigation techniques. These challenges include adhesion, film reliability, heat dissipation, and its low-temperature processing on flexible substrates. This is followed by the characterization of the TFT and its demonstration as best in its class, when it comes to this material system and associated fabrication constraints.

KW - Aluminum-doped ZnO

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KW - Flexible substrate

KW - High-k

KW - Thin-film transistor

KW - Transparent substrate

KW - Zinc oxide

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BT - The IoT Physical Layer

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ALD al-doped ZnO thin film as semiconductor and piezoelectric material: Transistors and sensors

Abstract

Keywords

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