TY - GEN
T1 - A Temperature-dependent Thermal Model of Silicon Carbide MOSFET Module for Long-term Reliability Assessment
AU - Chen, Mengxing
AU - Wang, Huai
AU - Blaabjerg, Frede
AU - Wang, Xiongfei
AU - Pan, Donghua
N1 - Funding Information:
This work is support by Innovation Fund Denmark under Grant 5185-00006B.
Publisher Copyright:
© 2018 IEEE.
PY - 2019/2/5
Y1 - 2019/2/5
N2 - The silicon carbide (SiC) device is by far the most promising technology for the next-generation power electronic systems. However, the wide application of SiC device is inhibited by its reliability uncertainties, and a comprehensive SiC thermal model, which considers the temperature-dependency, is still missing for long-term reliability assessment. Thus, this paper proposes a temperature-dependent thermal model of SiC MOSFET module, which is composed of RC lumped elements and it is suitable for long-term reliability analysis. To begin with, the temperature-dependent thermal properties of the packaging materials (including SiC) are fully investigated. Then, the finite element method (FEM) based analysis containing temperature-dependency is utilized to extract both the self-heating and cross-coupling thermal impedances. Finally, a diagram of the RC lumped temperature-dependent thermal model is proposed, which is verified using a 3-level active neutral-point clamped (3-L ANPC) study case by performing its PLECS simulation.
AB - The silicon carbide (SiC) device is by far the most promising technology for the next-generation power electronic systems. However, the wide application of SiC device is inhibited by its reliability uncertainties, and a comprehensive SiC thermal model, which considers the temperature-dependency, is still missing for long-term reliability assessment. Thus, this paper proposes a temperature-dependent thermal model of SiC MOSFET module, which is composed of RC lumped elements and it is suitable for long-term reliability analysis. To begin with, the temperature-dependent thermal properties of the packaging materials (including SiC) are fully investigated. Then, the finite element method (FEM) based analysis containing temperature-dependency is utilized to extract both the self-heating and cross-coupling thermal impedances. Finally, a diagram of the RC lumped temperature-dependent thermal model is proposed, which is verified using a 3-level active neutral-point clamped (3-L ANPC) study case by performing its PLECS simulation.
KW - finite element method
KW - RC lumped thermal model
KW - silicon carbide power device
KW - temperature-dependent thermal model
KW - thermal coupling effect
UR - http://www.scopus.com/inward/record.url?scp=85062831028&partnerID=8YFLogxK
U2 - 10.1109/SPEC.2018.8636024
DO - 10.1109/SPEC.2018.8636024
M3 - Conference contribution
AN - SCOPUS:85062831028
T3 - 2018 IEEE 4th Southern Power Electronics Conference, SPEC 2018
BT - 2018 IEEE 4th Southern Power Electronics Conference, SPEC 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 4th IEEE Southern Power Electronics Conference, SPEC 2018
Y2 - 10 December 2018 through 13 December 2018
ER -