A Temperature-dependent Thermal Model of Silicon Carbide MOSFET Module for Long-term Reliability Assessment

Mengxing Chen, Huai Wang, Frede Blaabjerg, Xiongfei Wang, Donghua Pan

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    9 Scopus citations

    Abstract

    The silicon carbide (SiC) device is by far the most promising technology for the next-generation power electronic systems. However, the wide application of SiC device is inhibited by its reliability uncertainties, and a comprehensive SiC thermal model, which considers the temperature-dependency, is still missing for long-term reliability assessment. Thus, this paper proposes a temperature-dependent thermal model of SiC MOSFET module, which is composed of RC lumped elements and it is suitable for long-term reliability analysis. To begin with, the temperature-dependent thermal properties of the packaging materials (including SiC) are fully investigated. Then, the finite element method (FEM) based analysis containing temperature-dependency is utilized to extract both the self-heating and cross-coupling thermal impedances. Finally, a diagram of the RC lumped temperature-dependent thermal model is proposed, which is verified using a 3-level active neutral-point clamped (3-L ANPC) study case by performing its PLECS simulation.

    Original languageBritish English
    Title of host publication2018 IEEE 4th Southern Power Electronics Conference, SPEC 2018
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Electronic)9781538682579
    DOIs
    StatePublished - 5 Feb 2019
    Event4th IEEE Southern Power Electronics Conference, SPEC 2018 - Singapore, Singapore
    Duration: 10 Dec 201813 Dec 2018

    Publication series

    Name2018 IEEE 4th Southern Power Electronics Conference, SPEC 2018

    Conference

    Conference4th IEEE Southern Power Electronics Conference, SPEC 2018
    Country/TerritorySingapore
    CitySingapore
    Period10/12/1813/12/18

    Keywords

    • finite element method
    • RC lumped thermal model
    • silicon carbide power device
    • temperature-dependent thermal model
    • thermal coupling effect

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