A temperature-dependent thermal model of IGBT modules suitable for circuit-level simulations

Rui Wu, Huai Wang, Ke Ma, Pramod Ghimire, Francesco Iannuzzo, Frede Blaabjerg

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    23 Scopus citations

    Abstract

    Thermal impedance of IGBT modules may vary with operating conditions due to that the thermal conductivity and heat capacity of materials are temperature dependent. This paper proposes a Cauer thermal model for a 1700 V/1000 A IGBT module with temperature-dependent thermal resistances and thermal capacitances. The temperature effect is investigated by Finite Element Method (FEM) simulation based on the geometry and material information of the IGBT module. The developed model is ready for circuit-level simulation to achieve an improved accuracy of the estimation on IGBT junction temperature and its relevant reliability aspect performance. A test bench is built up with an ultra-fast infrared (IR) camera to validate the proposed thermal impedance model.

    Original languageBritish English
    Title of host publication2014 IEEE Energy Conversion Congress and Exposition, ECCE 2014
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages2901-2908
    Number of pages8
    ISBN (Electronic)9781479956982
    DOIs
    StatePublished - 11 Nov 2014

    Publication series

    Name2014 IEEE Energy Conversion Congress and Exposition, ECCE 2014

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