TY - JOUR
T1 - A Temperature-Dependent Thermal Model of IGBT Modules Suitable for Circuit-Level Simulations
AU - Wu, Rui
AU - Wang, Huai
AU - Pedersen, Kristian Bonderup
AU - Ma, Ke
AU - Ghimire, Pramod
AU - Iannuzzo, Francesco
AU - Blaabjerg, Frede
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/7/1
Y1 - 2016/7/1
N2 - A basic challenge in the insulated gate bipolar transistor (IGBT) transient simulation study is to obtain the realistic junction temperature, which demands not only accurate electrical simulations but also precise thermal impedance. This paper proposed a transient thermal model for IGBT junction temperature simulations during short circuits or overloads. The updated Cauer thermal model with varying thermal parameters is obtained by means of finite-element method (FEM) thermal simulations with temperature-dependent physical parameters. The proposed method is applied to a case study of a 1700 V/1000 A IGBT module. Furthermore, a testing setup is built up to validate the simulation results, which is composed of a IGBT baseplate temperature control unit, an infrared camera with a maximum of 3 kHz sampling frequency, and a black-painted open IGBT module.
AB - A basic challenge in the insulated gate bipolar transistor (IGBT) transient simulation study is to obtain the realistic junction temperature, which demands not only accurate electrical simulations but also precise thermal impedance. This paper proposed a transient thermal model for IGBT junction temperature simulations during short circuits or overloads. The updated Cauer thermal model with varying thermal parameters is obtained by means of finite-element method (FEM) thermal simulations with temperature-dependent physical parameters. The proposed method is applied to a case study of a 1700 V/1000 A IGBT module. Furthermore, a testing setup is built up to validate the simulation results, which is composed of a IGBT baseplate temperature control unit, an infrared camera with a maximum of 3 kHz sampling frequency, and a black-painted open IGBT module.
KW - Insulated gate bipolar transistors (IGBTs)
KW - modeling
KW - power semiconductor devices
KW - semiconductor device reliability
KW - temperature measurement
UR - http://www.scopus.com/inward/record.url?scp=84978835977&partnerID=8YFLogxK
U2 - 10.1109/TIA.2016.2540614
DO - 10.1109/TIA.2016.2540614
M3 - Article
AN - SCOPUS:84978835977
SN - 0093-9994
VL - 52
SP - 3306
EP - 3314
JO - IEEE Transactions on Industry Applications
JF - IEEE Transactions on Industry Applications
IS - 4
M1 - 7430297
ER -