A Temperature-Dependent Thermal Model of IGBT Modules Suitable for Circuit-Level Simulations

Rui Wu, Huai Wang, Kristian Bonderup Pedersen, Ke Ma, Pramod Ghimire, Francesco Iannuzzo, Frede Blaabjerg

    Research output: Contribution to journalArticlepeer-review

    99 Scopus citations

    Abstract

    A basic challenge in the insulated gate bipolar transistor (IGBT) transient simulation study is to obtain the realistic junction temperature, which demands not only accurate electrical simulations but also precise thermal impedance. This paper proposed a transient thermal model for IGBT junction temperature simulations during short circuits or overloads. The updated Cauer thermal model with varying thermal parameters is obtained by means of finite-element method (FEM) thermal simulations with temperature-dependent physical parameters. The proposed method is applied to a case study of a 1700 V/1000 A IGBT module. Furthermore, a testing setup is built up to validate the simulation results, which is composed of a IGBT baseplate temperature control unit, an infrared camera with a maximum of 3 kHz sampling frequency, and a black-painted open IGBT module.

    Original languageBritish English
    Article number7430297
    Pages (from-to)3306-3314
    Number of pages9
    JournalIEEE Transactions on Industry Applications
    Volume52
    Issue number4
    DOIs
    StatePublished - 1 Jul 2016

    Keywords

    • Insulated gate bipolar transistors (IGBTs)
    • modeling
    • power semiconductor devices
    • semiconductor device reliability
    • temperature measurement

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