A-Si/c-Si1-xGex/c-Si heterojunction solar cells

Sabina Abdul Hadi; Ammar Nayfeh; Pouya Hashemi; Judy Hoyt

doi:10.1109/SISPAD.2011.6035083

A-Si/c-Si_1-xGe_x/c-Si heterojunction solar cells

Sabina Abdul Hadi
, Ammar Nayfeh
, Pouya Hashemi
, Judy Hoyt

Electrical Engineering

Massachusetts Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

12 Scopus citations

Abstract

The performance and material quality requirements of thin film a-Si/c-Si_1-xGe_x/Si heterojunction solar cells are investigated by modeling and simulation. The effects of Ge content, Si _1-xGe_x thickness, Si_1-xGe_x lifetime and a-Si/c-Si_1-xGe_x interfacial quality have been studied. The simulations predict that Si_1-xGe_x based thin film solar cells provide a significant increase in solar cell output current for Ge fractions larger than 30%, due to the narrower band-gap and increased absorption. In addition, the efficiency of thin (2μm) Si_1-xGe _x solar cells surpasses that of Si for minority carrier lifetimes larger than 0.5μs. For these 2μm thin layers, simulations predict reduced material quality requirements for Si_1-xGe_x cells, with a clear performance advantage relative to Si based solar cells.

Original language	British English
Title of host publication	2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011
Pages	191-194
Number of pages	4
DOIs	https://doi.org/10.1109/SISPAD.2011.6035083
State	Published - 2011
Event	2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011 - Osaka, Japan Duration: 8 Sep 2011 → 10 Sep 2011

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference	2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011
Country/Territory	Japan
City	Osaka
Period	8/09/11 → 10/09/11

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Efficiency
Heterojunction
Lifetime
SiGe
Solar
thin film

Access to Document

10.1109/SISPAD.2011.6035083

OpenUrl availability

Full text

Cite this

@inproceedings{faf86eda144f4f5682dfc85d6be5b9a0,

title = "A-Si/c-Si1-xGex/c-Si heterojunction solar cells",

abstract = "The performance and material quality requirements of thin film a-Si/c-Si1-xGex/Si heterojunction solar cells are investigated by modeling and simulation. The effects of Ge content, Si 1-xGex thickness, Si1-xGex lifetime and a-Si/c-Si1-xGex interfacial quality have been studied. The simulations predict that Si1-xGex based thin film solar cells provide a significant increase in solar cell output current for Ge fractions larger than 30\%, due to the narrower band-gap and increased absorption. In addition, the efficiency of thin (2μm) Si1-xGe x solar cells surpasses that of Si for minority carrier lifetimes larger than 0.5μs. For these 2μm thin layers, simulations predict reduced material quality requirements for Si1-xGex cells, with a clear performance advantage relative to Si based solar cells.",

keywords = "Efficiency, Heterojunction, Lifetime, SiGe, Solar, thin film",

author = "Hadi, \{Sabina Abdul\} and Ammar Nayfeh and Pouya Hashemi and Judy Hoyt",

year = "2011",

doi = "10.1109/SISPAD.2011.6035083",

language = "British English",

isbn = "9781612844169",

series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",

pages = "191--194",

booktitle = "2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011",

note = "2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011 ; Conference date: 08-09-2011 Through 10-09-2011",

}

Hadi, SA, Nayfeh, A, Hashemi, P & Hoyt, J 2011, A-Si/c-Si_1-xGe_x/c-Si heterojunction solar cells. in 2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011., 6035083, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, pp. 191-194, 2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011, Osaka, Japan, 8/09/11. https://doi.org/10.1109/SISPAD.2011.6035083

A-Si/c-Si_1-xGe_x/c-Si heterojunction solar cells. / Hadi, Sabina Abdul; Nayfeh, Ammar; Hashemi, Pouya et al.
2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011. 2011. p. 191-194 6035083 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A-Si/c-Si1-xGex/c-Si heterojunction solar cells

AU - Hadi, Sabina Abdul

AU - Nayfeh, Ammar

AU - Hashemi, Pouya

AU - Hoyt, Judy

PY - 2011

Y1 - 2011

N2 - The performance and material quality requirements of thin film a-Si/c-Si1-xGex/Si heterojunction solar cells are investigated by modeling and simulation. The effects of Ge content, Si 1-xGex thickness, Si1-xGex lifetime and a-Si/c-Si1-xGex interfacial quality have been studied. The simulations predict that Si1-xGex based thin film solar cells provide a significant increase in solar cell output current for Ge fractions larger than 30%, due to the narrower band-gap and increased absorption. In addition, the efficiency of thin (2μm) Si1-xGe x solar cells surpasses that of Si for minority carrier lifetimes larger than 0.5μs. For these 2μm thin layers, simulations predict reduced material quality requirements for Si1-xGex cells, with a clear performance advantage relative to Si based solar cells.

AB - The performance and material quality requirements of thin film a-Si/c-Si1-xGex/Si heterojunction solar cells are investigated by modeling and simulation. The effects of Ge content, Si 1-xGex thickness, Si1-xGex lifetime and a-Si/c-Si1-xGex interfacial quality have been studied. The simulations predict that Si1-xGex based thin film solar cells provide a significant increase in solar cell output current for Ge fractions larger than 30%, due to the narrower band-gap and increased absorption. In addition, the efficiency of thin (2μm) Si1-xGe x solar cells surpasses that of Si for minority carrier lifetimes larger than 0.5μs. For these 2μm thin layers, simulations predict reduced material quality requirements for Si1-xGex cells, with a clear performance advantage relative to Si based solar cells.

KW - Efficiency

KW - Heterojunction

KW - Lifetime

KW - SiGe

KW - Solar

KW - thin film

UR - https://www.scopus.com/pages/publications/80055006724

U2 - 10.1109/SISPAD.2011.6035083

DO - 10.1109/SISPAD.2011.6035083

M3 - Conference contribution

AN - SCOPUS:80055006724

SN - 9781612844169

T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

SP - 191

EP - 194

BT - 2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011

T2 - 2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011

Y2 - 8 September 2011 through 10 September 2011

ER -